BTA212B-600B,118 NXP Semiconductors, BTA212B-600B,118 Datasheet - Page 3
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BTA212B-600B,118
Manufacturer Part Number
BTA212B-600B,118
Description
TRIAC 600V 12A D2PAK
Manufacturer
NXP Semiconductors
Datasheet
1.BTA212B-600B118.pdf
(6 pages)
Specifications of BTA212B-600B,118
Package / Case
TO-263-3, D²Pak (2 leads + Tab), TO-263AB
Triac Type
Standard
Mounting Type
Surface Mount
Configuration
Single
Current - Hold (ih) (max)
60mA
Voltage - Off State
600V
Current - Gate Trigger (igt) (max)
50mA
Current - Non Rep. Surge 50, 60hz (itsm)
95A, 105A
Current - On State (it (rms)) (max)
12A
Voltage - Gate Trigger (vgt) (max)
1.5V
Current - On State (it (rms) (max)
12A
Rated Repetitive Off-state Voltage Vdrm
600 V
Breakover Current Ibo Max
105 A
On-state Rms Current (it Rms)
12 A
Off-state Leakage Current @ Vdrm Idrm
0.1 mA
Gate Trigger Voltage (vgt)
0.4 V
Gate Trigger Current (igt)
18 mA
Holding Current (ih Max)
60 mA
Forward Voltage Drop
1.3 V
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Repetitive Peak Forward Blocking Voltage
600 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-3725-2
934048160118
BTA212B-600B /T3
934048160118
BTA212B-600B /T3
Philips Semiconductors
September 1997
Three quadrant triacs
high commutation
Fig.1. Maximum on-state dissipation, P
on-state current, I
on-state current I
Fig.2. Maximum permissible non-repetitive peak
Fig.3. Maximum permissible non-repetitive peak
20
15
10
5
0
100
1000
on-state current I
80
60
40
20
100
0
Ptot / W
0
10
10us
1
ITSM / A
ITSM / A
dI /dt limit
sinusoidal currents, t
sinusoidal currents, f = 50 Hz.
T
100us
1
T(RMS)
5
TSM
Number of cycles at 50Hz
10
TSM
IT(RMS) / A
, versus number of cycles, for
, where
BT138
, versus pulse width t
BTA212
BT138
1ms
T / s
I
I
T
T
Tj initial = 25 C max
Tj initial = 25 C max
10
p
= conduction angle.
100
20ms.
10ms
T
T
Tmb(max) / C
120
90
60
30
tot
= 180
, versus rms
I TSM
I TSM
time
time
p
100ms
, for
15
1000
95
102.5
110
117.5
125
3
Fig.5. Maximum permissible repetitive rms on-state
current I
V
15
10
Fig.4. Maximum permissible rms current I
GT
5
0
-50
1.6
1.4
1.2
0.8
0.6
0.4
25
20
15
10
IT(RMS) / A
(T
5
0
0.01
1
-50
IT(RMS) / A
VGT(25 C)
versus mounting base temperature T
j
Fig.6. Normalised gate trigger voltage
)/ V
VGT(Tj)
T(RMS)
currents, f = 50 Hz; T
GT
(25˚C), versus junction temperature T
, versus surge duration, for sinusoidal
0
0
0.1
surge duration / s
BT138
BT138
BT136
Tj / C
Tmb / C
50
50
BTA212B series B
mb
Product specification
1
100
99˚C.
100
99 C
mb
Rev 1.200
T(RMS)
.
150
10
150
,
j
.