BTB16-600CW3G ON Semiconductor, BTB16-600CW3G Datasheet

TRIAC 16A 35MA 600V TO-220AB

BTB16-600CW3G

Manufacturer Part Number
BTB16-600CW3G
Description
TRIAC 16A 35MA 600V TO-220AB
Manufacturer
ON Semiconductor
Datasheet

Specifications of BTB16-600CW3G

Triac Type
Standard
Mounting Type
Through Hole
Configuration
Single
Current - Hold (ih) (max)
50mA
Voltage - Off State
600V
Current - Gate Trigger (igt) (max)
35mA
Current - Non Rep. Surge 50, 60hz (itsm)
170A @ 60Hz
Current - On State (it (rms)) (max)
16A
Voltage - Gate Trigger (vgt) (max)
1.1V
Package / Case
TO-220-3
Current - On State (it (rms) (max)
16A
Peak Repetitive Off-state Voltage, Vdrm
600V
Gate Trigger Current Max (qi), Igt
35mA
On State Rms Current It(rms)
16A
Peak Non Rep Surge Current Itsm 50hz
170A
Holding Current Max Ih
50mA
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BTB16-600CW3G
Manufacturer:
ON Semiconductor
Quantity:
30
BTB16-600CW3G,
BTB16-800CW3G
Triacs
Silicon Bidirectional Thyristors
where high noise immunity and high commutating di/dt are required.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2008
February, 2008 - Rev. 1
Peak Repetitive Off-State Voltage (Note 1)
(T
50 to 60 Hz, Gate Open)
On‐State RMS Current
(Full Cycle Sine Wave, 60 Hz, T
Peak Non‐Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
T
Circuit Fusing Consideration (t = 10 ms)
Non-Repetitive Surge Peak Off-State
Voltage (T
Peak Gate Current (T
Peak Gate Power
(Pulse Width ≤ 1.0 ms, T
Average Gate Power (T
Operating Junction Temperature Range
Storage Temperature Range
Designed for high performance full‐wave ac control applications
C
Blocking Voltage to 800 V
On‐State Current Rating of 16 A RMS at 25°C
Uniform Gate Trigger Currents in Three Quadrants
High Immunity to dV/dt - 1000 V/ms minimum at 125°C
Minimizes Snubber Networks for Protection
Industry Standard TO‐220AB Package
High Commutating dI/dt - 6.0 A/ms minimum at 125°C
These are Pb-Free Devices
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
J
= 25°C)
DRM
= -40 to 125°C, Sine Wave,
and V
J
= 25°C, t = 10ms)
RRM
Rating
for all types can be applied on a continuous basis. Blocking
J
= 125°C, t = 20ms)
BTB16-600CW3G
BTB16-800CW3G
J
(T
C
= 125°C)
= 80°C)
J
= 25°C unless otherwise noted)
C
= 80°C)
Symbol
I
P
V
V
V
T(RMS)
V
I
P
I
T
TSM
G(AV)
DRM,
DSM/
RRM
RSM
I
GM
T
GM
stg
2
J
t
V
-40 to +125
-40 to +150
DSM/
Value
+100
600
800
170
144
4.0
1.0
16
20
V
RSM
1
A
Unit
2
°C
°C
W
W
V
A
A
V
A
sec
*For additional information on our Pb-Free strategy and
BTB16-600CW3G
BTB16-800CW3G
soldering details, please download the ON Semicon‐
ductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
1
2
x
A
Y
WW
G
3
1
2
3
4
Device
MT2
ORDERING INFORMATION
600 thru 800 VOLTS
16 AMPERES RMS
4
= 6 or 8
= Assembly Location
= Year
= Work Week
= Pb-Free Package
http://onsemi.com
PIN ASSIGNMENT
CASE 221A
TO-220AB
STYLE 4
TRIACS
TO-220AB
TO-220AB
(Pb-Free)
(Pb-Free)
Package
Main Terminal 1
Main Terminal 2
Main Terminal 2
Publication Order Number:
Gate
BTB16-600CW3/D
BTB16-xCWG
G
MARKING
DIAGRAM
50 Units / Rail
50 Units / Rail
MT1
AYWW
Shipping

Related parts for BTB16-600CW3G

BTB16-600CW3G Summary of contents

Page 1

... W G(AV) °C T -40 to +125 J °C T -40 to +150 stg BTB16-600CW3G BTB16-800CW3G *For additional information on our Pb-Free strategy and soldering details, please download the ON Semicon‐ ductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 1 http://onsemi.com TRIACS 16 AMPERES RMS 600 thru 800 VOLTS ...

Page 2

... BTB16-600CW3G, BTB16-800CW3G THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Peak Repetitive Blocking Current (V = Rated Gate Open) D DRM RRM ON CHARACTERISTICS Peak On‐State Voltage (Note 2) = ± 22.5 A Peak) ...

Page 3

... BTB16-600CW3G, BTB16-800CW3G Voltage Current Characteristic of Triacs Symbol Parameter V Peak Repetitive Forward Off State Voltage DRM I Peak Forward Blocking Current DRM V Peak Repetitive Reverse Off State Voltage RRM I Peak Reverse Blocking Current RRM V Maximum On State Voltage TM I Holding Current H Quadrant II (-) I GATE ...

Page 4

... BTB16-600CW3G, BTB16-800CW3G 125 120 115 110 105 100 120° 95 180° RMS ON‐STATE CURRENT (AMP) T(RMS) Figure 1. Typical RMS Current Derating 100 TYPICAL 25° MAXIMUM @ T = 25° 0.1 0 0.5 1 1 INSTANTANEOUS ON‐STATE VOLTAGE (V) T Figure 3. On‐State Characteristics 30° ...

Page 5

... BTB16-600CW3G, BTB16-800CW3G 100 -40 -25 - JUNCTION TEMPERATURE (°C) J Figure 6. Typical Gate Trigger Current Variation 5000 100 R , GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS) G Figure 8. Critical Rate of Rise of Off‐State Voltage (Exponential Waveform) 200 V RMS ADJUST FOR CHARGE TRIGGER CONTROL CHARGE NON‐POLAR Note: Component values are for verification of rated (di/dt) Figure 10 ...

Page 6

... BTB16-600CW3G, BTB16-800CW3G Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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