MMBV3102LT1G ON Semiconductor, MMBV3102LT1G Datasheet

DIODE TUNING SS 30V SOT23

MMBV3102LT1G

Manufacturer Part Number
MMBV3102LT1G
Description
DIODE TUNING SS 30V SOT23
Manufacturer
ON Semiconductor
Datasheet

Specifications of MMBV3102LT1G

Capacitance @ Vr, F
25pF @ 3V, 1MHz
Capacitance Ratio
4.8
Capacitance Ratio Condition
C3/C25
Voltage - Peak Reverse (max)
30V
Diode Type
Single
Q @ Vr, F
200 @ 3V, 50MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MMBV3102LT1GOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMBV3102LT1G
Manufacturer:
ON
Quantity:
3 000
Part Number:
MMBV3102LT1G
Manufacturer:
ON
Quantity:
30 000
MMBV3102LT1G
Silicon Tuning Diode
frequency control and tuning applications. It provides solid−state
reliability in replacement of mechanical tuning methods.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 4
MAXIMUM RATINGS
Reverse Voltage
Forward Current
Device Dissipation @ T
Junction Temperature
Storage Temperature Range
This device is designed in the Surface Mount package for general
Compliant
High Q with Guaranteed Minimum Values at VHF Frequencies
Controlled and Uniform Tuning Ratio
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Derate above 25°C
Rating
A
(T
= 25°C
C
= 25°C unless otherwise noted)
Symbol
T
V
P
T
I
stg
F
R
D
J
−55 to +150
Value
+125
200
225
1.8
30
1
mW/°C
mAdc
Unit
mW
Vdc
°C
°C
†For information on tape and reel specifications,
MMBV3102LT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
Device
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
ORDERING INFORMATION
M4C = Specific Device Code
M
G
Cathode
MARKING DIAGRAM
http://onsemi.com
3
SOT−23 (TO−236)
= Date Code*
= Pb−Free Package
1
1
(Pb−Free)
Package
CASE 318
SOT−23
STYLE 8
M4CM G
2
Publication Order Number:
G
3
3,000 / Tape & Reel
Anode
MMBV3102LT1/D
1
Shipping

Related parts for MMBV3102LT1G

MMBV3102LT1G Summary of contents

Page 1

... Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping MMBV3102LT1G SOT−23 3,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D ...

Page 2

ELECTRICAL CHARACTERISTICS (T Characteristic Reverse Breakdown Voltage ( mAdc) R Reverse Voltage Leakage Current ( Vdc 25° Diode Capacitance Temperature Coefficient (V = 4.0 Vdc 1.0 MHz) R Device MMBV3102LT1 ...

Page 3

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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