ZC830ATA Diodes Zetex, ZC830ATA Datasheet - Page 3

DIODE VAR CAP 10PF 25V SOT23-3

ZC830ATA

Manufacturer Part Number
ZC830ATA
Description
DIODE VAR CAP 10PF 25V SOT23-3
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZC830ATA

Capacitance @ Vr, F
11pF @ 2V, 1MHz
Capacitance Ratio
6
Capacitance Ratio Condition
C2/C20
Voltage - Peak Reverse (max)
25V
Diode Type
Single
Q @ Vr, F
300 @ 3V, 50MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
ZC830ATR
Tuning characteristics at T
Absolute maximum ratings
Electrical characteristics at T
Issue 11 - January 2007
© Zetex Semiconductors plc 2007
Part
829A
829B
830A
830B
831A
831B
832A
832B
833A
833B
834A
834B
835A
835B
836A
836B
Parameter
Forward current
Power dissipation at T
Power dissipation at T
Power dissipation at T
Operating and storage temperature range
Paramater
Reverse breakdown voltage
Reverse voltage leakage
Temperature coefficient of
capacitance
14.25
31.35
44.65
Min.
7.38
7.79
13.5
19.8
20.9
29.7
42.3
61.2
64.6
90.0
95.0
9.0
9.5
amb
amb
amb
Capacitance (pF)
V
= 25°C SOT23
= 25°C SOD323
= 25°C SOD523
R
=2V, f=1MHz
Nom.
amb
100.0
100.0
Conditions
I
V
V
10.0
10.0
15.0
15.0
22.0
22.0
33.0
33.0
47.0
47.0
68.0
68.0
R
8.2
8.2
R
R
= 10 A
amb
= 20V
= 3V, f = 1MHz
= 25°C
= 25°C
15.75
34.65
49.35
110.0
105.0
Max.
9.02
8.61
11.0
10.5
16.5
24.2
23.1
36.3
51.7
74.8
71.4
3
Symbol
Min.
P
P
P
25
I
tot
tot
tot
F
f = 50MHz
V
Min Q
R
250
250
300
300
300
300
200
200
200
200
200
200
100
100
100
100
= 3V
Typ.
300
0.2
-55 to +150
Max.
200
330
330
250
Min.
Capacitance ratio
4.3
4.3
4.5
4.5
4.5
4.5
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
Max.
400
20
@ f = 1MHz
830 series
C
www.zetex.com
2
/ C
20
ppCm/°C
Max.
Unit
Unit
mW
mW
mW
mA
nA
5.8
5.8
6.0
6.0
6.0
6.0
6.5
6.5
6.5
6.5
6.5
6.5
6.5
6.5
6.5
6.5
°C
V

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