S29GL256P90FFCR10 Spansion Inc., S29GL256P90FFCR10 Datasheet - Page 27
S29GL256P90FFCR10
Manufacturer Part Number
S29GL256P90FFCR10
Description
IC 256M PAGE-MODE FLASH MEMORY
Manufacturer
Spansion Inc.
Datasheet
1.S29GL512P11FFI020.pdf
(79 pages)
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June 11, 2008 S29GL-P_00_A11
The write-buffer “embedded” programming operation can be suspended using the standard suspend/resume
commands. Upon successful completion of the Write Buffer Programming operation, the device returns to
READ mode.
The Write Buffer Programming Sequence is ABORTED under any of the following conditions:
The ABORT condition is indicated by DQ1 = 1, DQ7 = DATA# (for the “last address location loaded”), DQ6 =
TOGGLE, DQ5 = 0. This indicates that the Write Buffer Programming Operation was ABORTED. A “Write-to-
Buffer-Abort reset” command sequence is required when using the write buffer Programming features in
Unlock Bypass mode. Note that the Secured Silicon sector, autoselect, and CFI functions are unavailable
when a program operation is in progress.
Write buffer programming is allowed in any sequence of memory (or address) locations. These flash devices
are capable of handling multiple write buffer programming operations on the same write buffer address range
without intervening erases.
Use of the write buffer is strongly recommended for programming when multiple words are to be
programmed.
Load a value that is greater than the page buffer size during the “Number of Locations to Program” step.
Write to an address in a sector different than the one specified during the Write-Buffer-Load command.
Write an Address/Data pair to a different write-buffer-page than the one selected by the “Starting Address”
during the “write buffer data loading” stage of the operation.
Writing anything other than the Program to Buffer Flash Command after the specified number of “data
load” cycles.
D a t a
S29GL-P MirrorBit
S h e e t
®
Flash Family
27
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