MT47H64M16HR-25E:H Micron Technology Inc, MT47H64M16HR-25E:H Datasheet

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MT47H64M16HR-25E:H

Manufacturer Part Number
MT47H64M16HR-25E:H
Description
64MX16 DDR2 SDRAM PLASTIC PBF FBGA 1.8V
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Series
-r
Datasheet

Specifications of MT47H64M16HR-25E:H

Organization
64Mx16
Density
1Gb
Address Bus
16b
Access Time (max)
400ps
Maximum Clock Rate
800MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
160mA
Pin Count
84
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
1G (64M x 16)
Speed
2.5ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
84-TFBGA
Lead Free Status / Rohs Status
Compliant

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Part Number:
MT47H64M16HR-25E:H TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
DDR2 SDRAM
MT47H256M4 – 32 Meg x 4 x 8 banks
MT47H128M8 – 16 Meg x 8 x 8 banks
MT47H64M16 – 8 Meg x 16 x 8 banks
Features
• V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Duplicate output strobe (RDQS) option for x8
• DLL to align DQ and DQS transitions with CK
• 8 internal banks for concurrent operation
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1
• Selectable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Industrial temperature (IT) option
• Automotive temperature (AT) option
• RoHS-compliant
• Supports JEDEC clock jitter specification
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. V 6/10 EN
DD
= +1.8V ±0.1V, V
Products and specifications discussed herein are subject to change by Micron without notice.
DDQ
= +1.8V ±0.1V
t
CK
1
Options
• Configuration
• FBGA package (Pb-free) – x16
• FBGA package (Pb-free) – x4, x8
• FBGA package (Pb-free) – x4, x8
• FBGA package (lead solder) – x16
• FBGA package (lead solder) – x4, x8
• FBGA package (lead solder) – x4, x8
• Timing – cycle time
• Self refresh
• Operating temperature
• Revision
– 256 Meg x 4 (32 Meg x 4 x 8 banks)
– 128 Meg x 8 (16 Meg x 8 x 8 banks)
– 64 Meg x 16 (8 Meg x 16 x 8 banks)
– 84-ball FBGA (8mm x 12.5mm)
– 60-ball FBGA (8mm x 11.5mm)
– 60-ball FBGA (8mm x 10mm) Rev. H
– 84-ball FBGA (8mm x 12.5mm)
– 60-ball FBGA (8mm x 11.5mm)
– 60-ball FBGA (8mm x 10mm) Rev. H
– 1.875ns @ CL = 7 (DDR2-1066)
– 2.5ns @ CL = 5 (DDR2-800)
– 2.5ns @ CL = 6 (DDR2-800)
– 3.0ns @ CL = 4 (DDR2-667)
– 3.0ns @ CL = 5 (DDR2-667)
– 3.75ns @ CL = 4 (DDR2-533)
– Standard
– Low-power
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– Automotive (–40°C ≤ T
Note:
Rev. G, H
Rev. G
Rev. G, H
Rev. G
–40°C ≤ T
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1. Not all options listed can be combined to
1
define an offered product. Use the Part
Catalog Search on
product offerings and availability.
1Gb: x4, x8, x16 DDR2 SDRAM
A
≤ 85°C)
C
C
≤ 85°C)
≤ 95°C;
C
© 2004 Micron Technology, Inc. All rights reserved.
, T
www.micron.com
A
≤ 105ºC)
Features
Marking
256M4
128M8
64M16
-187E
:G/:H
None
None
-25E
-37E
HW
HQ
-3E
HR
HV
-25
CF
AT
JN
-3
IT
for
L

Related parts for MT47H64M16HR-25E:H

MT47H64M16HR-25E:H Summary of contents

Page 1

... Commercial (0°C ≤ T – Industrial (–40°C ≤ T –40°C ≤ T – Automotive (–40°C ≤ T • Revision Note: 1 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1Gb: x4, x8, x16 DDR2 SDRAM 1 ≤ 85°C) C ≤ 95°C; C ≤ 85°C) A ≤ ...

Page 2

... Revision L Low power IT Industrial temperature AT Automotive temperature Speed Grade 1.875ns -187E 2.5ns -25E 2.5ns - 3ns - 3ns 3.75ns -37E 2 1Gb: x4, x8, x16 DDR2 SDRAM 800 1066 800 n/a 800 n/a n/a n/a n/a n/a n/a n/a 64 Meg Meg banks 8K A[12:0] (8K) BA[2:0] (8) BA[2:0] (8) ...

Page 3

... For a quick conversion of an FBGA code, see the FBGA Part Marking Decoder on Micron’s Web site: http://www.micron.com. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. V 6/10 EN 1Gb: x4, x8, x16 DDR2 SDRAM 3 Micron Technology, Inc. reserves the right to change products or specifications without notice. Features ...

Page 4

... Output Drive Strength ................................................................................................................................ 83 DQS# Enable/Disable ................................................................................................................................. 83 RDQS Enable/Disable ................................................................................................................................. 83 Output Enable/Disable ............................................................................................................................... 83 On-Die Termination (ODT) ........................................................................................................................ 84 PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. V 6/10 EN 1Gb: x4, x8, x16 DDR2 SDRAM 4 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. ...

Page 5

... CKE Low Anytime ...................................................................................................................................... 126 ODT Timing .................................................................................................................................................. 128 MRS Command to ODT Update Delay ........................................................................................................ 130 PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. V 6/10 EN 1Gb: x4, x8, x16 DDR2 SDRAM 5 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. ...

Page 6

... Table 41: Burst Definition .............................................................................................................................. 79 Table 42: READ Using Concurrent Auto Precharge ......................................................................................... 99 Table 43: WRITE Using Concurrent Auto Precharge ....................................................................................... 105 Table 44: Truth Table – CKE ......................................................................................................................... 120 PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev DS, DH Derating Values with Differential Strobe ............................................ 1Gb: x4, x8, x16 DDR2 SDRAM and IH) ................................................... and IH) .......................................... and DH ...

Page 7

... Figure 48: READ Interrupted by READ ........................................................................................................... 97 Figure 49: READ-to-WRITE ............................................................................................................................ 97 Figure 50: READ-to-PRECHARGE – ...................................................................................................... 98 PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev .............................................................................................................. .............................................................................................................. ............................................................................................................. ............................................................................................................ 68 t RCD (MIN) .............................................................................. 91 7 1Gb: x4, x8, x16 DDR2 SDRAM Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. ...

Page 8

... DQSQ, QH, and Data Valid Window ................................................. 102 t t DQSQ, QH, and Data Valid Window ..................................................... 103 and DQSCK ......................................................................................... 104 8 1Gb: x4, x8, x16 DDR2 SDRAM Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. ...

Page 9

... Bank active READ WRITE PRE, PRE_A Precharging identify all timing requirements or possible command restrictions such as multibank in- teraction, power down, entry/exit, etc. 9 1Gb: x4, x8, x16 DDR2 SDRAM State Diagram CKE_L Self refreshing REFRESH Refreshing Precharge power- down CKE_L ACT = ACTIVATE ...

Page 10

... I/O balls. A bidirectional data strobe (DQS, DQS#) is transmitted externally, along with data, for use in data capture at the receiver. DQS is a strobe transmitted by the DDR2 SDRAM during READs and by the memory controller during WRITEs. DQS is edge-aligned with data for READs and center-aligned with data for WRITEs. The x16 offering has two data strobes, one for the lower byte (LDQS, LDQS#) and one for the upper byte (UDQS, UDQS#). The DDR2 SDRAM operates from a differential clock (CK and CK#) ...

Page 11

... Any specific requirement takes precedence over a general statement. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. V 6/10 EN 1Gb: x4, x8, x16 DDR2 SDRAM Functional Description 11 Micron Technology, Inc. reserves the right to change products or specifications without notice. exceeds C is < ...

Page 12

... Functional Block Diagrams The DDR2 SDRAM is a high-speed CMOS, dynamic random access memory inter- nally configured as a multibank DRAM. Figure 3: 256 Meg x 4 Functional Block Diagram ODT CKE Control CK logic CK# CS# RAS# CAS# WE# Refresh Mode 14 counter registers address 17 14 A0–A13, Address 17 BA0– ...

Page 13

... I/O gating DM mask logic Bank control 256 logic (x32) Column CK,CK# decoder Column- 8 address 2 counter/ latch COL0, COL1 13 1Gb: x4, x8, x16 DDR2 SDRAM Functional Block Diagrams ODT control CK, CK# COL0, COL1 sw1 sw2 8 DLL 8 sw1 sw2 8 32 Read 8 DRVRS R1 MUX latch ...

Page 14

... Column CK, CK# CK out decoder Column- 8 address 2 counter/ latch COL0, COL1 14 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1Gb: x4, x8, x16 DDR2 SDRAM Functional Block Diagrams ODT control CK, CK# COL0, COL1 sw1 sw2 16 DLL 16 sw1 sw2 16 16 DRVRS ...

Page 15

... V NC, RDQS#/ DM, DM/RDQS SSQ DQ1 V DDQ V DQ3 SSQ V V REF SS CKE WE# BA0 BA1 A10 A12 RFU 15 1Gb: x4, x8, x16 DDR2 SDRAM Ball Assignments and Descriptions DQS#/NU SSQ DDQ DQS V NF, DQ7 SSQ V DQ0 V DDQ DDQ DQ2 V NF, DQ5 SSQ SSDL DD RAS# ...

Page 16

... SS V LDM SSQ DQ1 V DDQ V DQ3 SSQ V V REF SS CKE WE# BA0 BA1 A10 A12 RFU DD 16 1Gb: x4, x8, x16 DDR2 SDRAM Ball Assignments and Descriptions UDQS#/NU SSQ DDQ UDQS V DQ15 SSQ V DQ8 V DDQ DDQ DQ10 V DQ13 SSQ V V LDQS#/NU SSQ DDQ ...

Page 17

... Input On-die termination: ODT (registered HIGH) enables termination resistance internal to the DDR2 SDRAM. When enabled, ODT is only applied to each of the following balls: DQ[15:0], LDM, UDM, LDQS, LDQS#, UDQS, and UDQS# for the x16; DQ[7:0], DQS, DQS#, RDQS, RDQS#, and DM for the x8; DQ[3:0], DQS, DQS#, and DM for the x4. The ODT input will be ignored if disabled via the LOAD MODE command ...

Page 18

... Not used: For x8 only. If EMR(E10 and E8 are RDQS# and DQS#. If EMR(E10 then A2 and E8 are not used. – RFU Reserved for future use: Row address bits A13 (x16 only), A14, and A15. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. V 6/10 EN 1Gb: x4, x8, x16 DDR2 SDRAM Ball Assignments and Descriptions /2). DDQ and ...

Page 19

... 0.8 TYP 6.4 CTR 8 ±0.1 36%Pb, 2% Ag). 19 1Gb: x4, x8, x16 DDR2 SDRAM Seating plane 0.12 A 1.1 ±0.1 0.25 MIN Exposed gold plated pad 1.0 MAX X 0.7 nominal. Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. ...

Page 20

... CTR 1.0 MAX X 0.7 8 ±0.1 nonconductive floating pad 36%Pb, 2% Ag). 20 1Gb: x4, x8, x16 DDR2 SDRAM Ball A1 ID 1.2 MAX 0.25 MIN Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. Packaging ...

Page 21

... 0.8 TYP 6.4 CTR 8 ±0.1 36%Pb, 2% Ag). 21 1Gb: x4, x8, x16 DDR2 SDRAM Seating plane 0.12 A 1.1 ±0.1 0.25 MIN Exposed gold plated pad 1.0 MAX X 0.7 nominal. Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. ...

Page 22

... PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev +1.8V ±0.1V MHz 25° / OUT(DC) DDQ with I/O balls, reflecting the fact that they are matched in loading. any given device. 22 1Gb: x4, x8, x16 DDR2 SDRAM Symbol Min Max Units Notes C 1.0 CK – C 0.25 DCK C 1.0 I – C ...

Page 23

... TN-00-08, listed in Table 7. For designs that are expected to last several years and require the flexi- bility to use several DRAM die shrinks, consider using final target theta values (rather than existing values) to account for increased thermal impedances from the die size re- duction. The DDR2 SDRAM device’ ...

Page 24

... Figure 11. This case temperature limit is allowed to be exceeded briefly during pack- age reflow, as noted in Micron technical note TN-00-15, “Recommended Soldering Parameters.” in Figure 11. tion. Length (L) 0.5 (L) 0.5 (W) Width (W) Lmm x Wmm FBGA 24 1Gb: x4, x8, x16 DDR2 SDRAM Min Max Units T –55 150 STG ...

Page 25

... DDR2 SDRAM θ JA (°C/W) θ JB (°C/W) θ JC (°C/W) Airflow = 2m/s 43.1 30.3 36.4 30 39.3 26.1 32.8 26.1 49.5 35.6 42.3 35.2 46 ...

Page 26

... Defined by pattern in Table 9 (page 27) Defined by pattern in Table 9 (page 27) 26 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1Gb: x4, x8, x16 DDR2 SDRAM DD -3E -3 -37E 7.5 7.5 7 ...

Page 27

... RA7 active read auto precharge deselect. Notes: 2. All banks are being interleaved at 3. Control and address bus inputs are stable during deselects. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. V 6/10 EN 1Gb: x4, x8, x16 DDR2 SDRAM Electrical Specifications – Where general I DD7 without violating ...

Page 28

... I Fast exit 50 DD3Pf MR12 = 0 I Slow exit 10 DD3Ps MR12 = DD3N x16 95 28 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1Gb: x4, x8, x16 DDR2 SDRAM Parameters DD -25E/ -3E/ -25 -3 -37E - 150 135 110 110 110 100 95 ...

Page 29

... DD6L I x4, x8 DD7 x16 ); specifications are tested after the device is properly initialized. 0°C ≤ +1.8V ±0.1V +1.8V ±0.1V DDQ parameters are specified with ODT disabled 1Gb: x4, x8, x16 DDR2 SDRAM DD -25E/ -3E/ -25 -3 -37E 190 145 120 110 210 160 135 125 ...

Page 30

... DD2Q ≥ 85° 2%; I must be derated by 20 DD2P C 30%; and I must be derated by 80% (I DD6 T < 85°C and the 2X refresh option is still enabled 1Gb: x4, x8, x16 DDR2 SDRAM DD limits increase) on IT-option and AT-op- DD ≤ 85°C: C and I DD4R DD5W must be derated by 7% DD7 , ...

Page 31

... RAS = RAS DD4W I x4, x8, x16 DD2P I x4, x8 DD2Q ); CKE x4, x8 DD2N I Fast exit DD3Pf MR12 = 0 I Slow exit DD3Ps MR12 = 1 I x4, x8 DD3N ), ,x8 DD4W t RAS MAX 31 1Gb: x4, x8, x16 DDR2 SDRAM -25E/ -187E - x16 100 80 100 75 x16 115 x16 x16 x16 ...

Page 32

... DD tion devices when operated outside of the range 0°C ≤ T When I and I must be derated by 4%; I DD2P DD3P(SLOW) ≤ 0° 2%; and I and I T DD6 C 32 1Gb: x4, x8, x16 DDR2 SDRAM -25E/ -187E -25 150 120 x16 190 150 180 145 x16 210 150 7 7 ...

Page 33

... DD3N ≥ 85° 2%; I must be derated by 20 DD2P C 30%; and I must be derated by 80% (I DD6 T < 85°C and the 2X refresh option is still enabled 1Gb: x4, x8, x16 DDR2 SDRAM and I DD3P(FAST) DD4R DD4W DD5W must be derated by DD3P(SLOW) will increase by this amount if DD6 Micron Technology, Inc. reserves the right to change products or specifications without notice. ...

Page 34

AC Timing Operating Specifications Table 12: AC Operating Specifications and Conditions Not all speed grades listed may be supported for this device; refer to the title page for speeds supported; Notes: 1–5 apply to the entire table +1.8V ...

Page 35

Table 12: AC Operating Specifications and Conditions (Continued) Not all speed grades listed may be supported for this device; refer to the title page for speeds supported; Notes: 1–5 apply to the entire table +1.8V ±0.1V ...

Page 36

Table 12: AC Operating Specifications and Conditions (Continued) Not all speed grades listed may be supported for this device; refer to the title page for speeds supported; Notes: 1–5 apply to the entire table +1.8V ±0.1V ...

Page 37

Table 12: AC Operating Specifications and Conditions (Continued) Not all speed grades listed may be supported for this device; refer to the title page for speeds supported; Notes: 1–5 apply to the entire table +1.8V ±0.1V ...

Page 38

Table 12: AC Operating Specifications and Conditions (Continued) Not all speed grades listed may be supported for this device; refer to the title page for speeds supported; Notes: 1–5 apply to the entire table +1.8V ±0.1V ...

Page 39

Table 12: AC Operating Specifications and Conditions (Continued) Not all speed grades listed may be supported for this device; refer to the title page for speeds supported; Notes: 1–5 apply to the entire table +1.8V ±0.1V ...

Page 40

Table 12: AC Operating Specifications and Conditions (Continued) Not all speed grades listed may be supported for this device; refer to the title page for speeds supported; Notes: 1–5 apply to the entire table +1.8V ±0.1V ...

Page 41

... Micron requires less derating by allowing t vice output is no longer driving ( RPST) or beginning to drive ( 41 1Gb: x4, x8, x16 DDR2 SDRAM -to-V swing 1.0V in the test environment and V . Slew rates other than 1.0 V/ns may ...

Page 42

... The inputs to the DRAM must be aligned to the associated clock, that is, the actual clock 19. The DRAM output timing is aligned to the nominal or average clock. Most output param- 20. When DQS is used single-ended, the minimum limit is reduced by 100ps. 21. 22. 23. This is not a device limit. The device will operate with a negative value, but system per- 24 recommended that DQS be valid (HIGH or LOW before the WRITE command. 25. The intent of the “ ...

Page 43

... READ command internally latches the READ so that data will output CL later. This parameter is only applicable when t t 533 MHz when RTP = 7.5ns. If RTP/(2 × (MIN) has to be satisfied as well. The DDR2 SDRAM will automatically delay the internal t PRECHARGE command until RAS (MIN) has been satisfied ...

Page 44

... V . This measurement taken at the nearest V REF(DC) is not applied directly to the device resistors, is expected to be set equal REF 44 1Gb: x4, x8, x16 DDR2 SDRAM AC and DC Operating Conditions t AON (MAX) is when the ODT resistance is fully on. t ERR 5per t ERR t AC (MAX) + 1000 but it will likely be ...

Page 45

... PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev DDQ and R are determined by separately applying V TT1(EFF) TT2(EFF) being tested, and then measuring current, I(V between –40°C and 0° 1Gb: x4, x8, x16 DDR2 SDRAM ODT DC Electrical Characteristics Symbol Min Nom Max TT1(EFF) R 120 150 ...

Page 46

... PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. V 6/10 EN Input Electrical Characteristics and Operating Conditions Symbol V V IH(DC) V IL(DC) + 300mV allowed provided 1.9V is not exceeded. DDQ Symbol 1Gb: x4, x8, x16 DDR2 SDRAM Min Max 1 + 125 V REF(DC) DDQ –300 V - 125 REF(DC) Min Max V + 250 V IH(AC) ...

Page 47

... DQS) level and V is expected to be approximately 0.5 × 300mV allowed provided 1.9V is not exceeded. DDQ X X RDQS#, LDQS#, and UDQS# signals. V /2. DDQ ID(DC)min 47 1Gb: x4, x8, x16 DDR2 SDRAM Max V DDQ V DDQ V DDQ - 175 0.50 × 175 DDQ ...

Page 48

... Numbers in diagram reflect nominal values (V PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. V 6/10 EN Input Electrical Characteristics and Operating Conditions 48 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1Gb: x4, x8, x16 DDR2 SDRAM = 1.8V). DDQ © 2004 Micron Technology, Inc. All rights reserved. ...

Page 49

... SSTL_18 receiver. The actual current val- IL,max ues are derived by shifting the desired driver operating point (see output IV curves) along a 21Ω load line to define a convenient driver current for measurement. 49 1Gb: x4, x8, x16 DDR2 SDRAM Max - 125 0.50 × 125 ...

Page 50

... V teed by design and characterization. 40°C and 0° DDQ 25Ω Reference point ) 50 1Gb: x4, x8, x16 DDR2 SDRAM Nom Max – 4 – +1.8V ±0.1V +1.8V ±0.1V. DDQ DD must be less than 23.4Ω for values of V must be less than 23.4Ω for values ...

Page 51

... DDR2 SDRAM Output Driver Characteristics 1.5 Nom 0.00 5.63 11.30 16.52 22.19 27.59 32.39 36.45 40.38 44.01 47.01 49.63 51.71 53.32 54 ...

Page 52

... DDR2 SDRAM Output Driver Characteristics 1.5 Nom 0.00 –5.63 –11.30 –16.52 –22.19 –27.59 –32.39 –36.45 –40.38 –44.01 –47.01 –49.63 –51.71 –53.32 – ...

Page 53

... DDR2 SDRAM Output Driver Characteristics 1.5 Nom 0.00 2.98 5.99 8.75 11.76 14.62 17.17 19.32 21.40 23.32 24.92 26.30 27.41 28.26 29 ...

Page 54

... DDR2 SDRAM Output Driver Characteristics 1.5 Nom 0.00 –2.98 –5.99 –8.75 –11.76 –14.62 –17.17 –19.32 –21.40 –23.32 –24.92 –26.30 –27.41 –28.26 – ...

Page 55

... Voltage Across Clamp (V) 55 1Gb: x4, x8, x16 DDR2 SDRAM Minimum Ground Clamp Current (mA) 0.0 0.0 0.0 0.0 0.0 ...

Page 56

... Figure 21) 0.19 Vns DDQ (see Figure 22) 0.19 Vns SSQ Maximum amplitude DDQ SSQ Time (ns) SSQ Maximum amplitude Time (ns) 56 1Gb: x4, x8, x16 DDR2 SDRAM Specification -25/-25E -3/-3E 0.50V 0.50V 0.50V 0.50V 0.50V 0.50V 0.66 Vns 0.80 Vns 0.66 Vns 0.80 Vns ...

Page 57

... AC level: 2 × × V IL(DC the falling edge. For example, the CK/CK# would be –250mV to +500mV for IH(DC) CK rising edge and would be +250mV to –500mV for CK falling edge. 57 1Gb: x4, x8, x16 DDR2 SDRAM Min Max Units See Note 2 See Note 5 V × 0.49 V × ...

Page 58

... REF(DC) level is used for the derating value (Figure 26 (page 62)). REF(DC the time of the rising clock transition), a valid IH[AC] IL[AC] 58 1Gb: x4, x8, x16 DDR2 SDRAM Input Slew Rate Derating t IH (hold time) required is calculated IH (base) value to the Δ IS and Δ (base) + Δ ...

Page 59

... PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. V 6/10 EN 1Gb: x4, x8, x16 DDR2 SDRAM Input Slew Rate Derating and IH) CK, CK# Differential Slew Rate 2.0 V/ns 1.5 V/ns Δ Δ Δ Δ ...

Page 60

... DDR2 SDRAM Input Slew Rate Derating and IH) 1.0 V/ns Δ Δ +210 +154 +203 +149 +193 +143 +180 ...

Page 61

... IL(AC)max = rising signal Δ REF Nominal region line Tangent line Nominal line ΔTF SS Setup slew rate = rising signal 61 1Gb: x4, x8, x16 DDR2 SDRAM Input Slew Rate Derating Nominal slew rate REF region Δ IH(AC)min REF(DC) = Δ Tangent line REF region ΔTR ...

Page 62

... DDQ REF region Tangent line Nominal V SS ΔTR Tangent line ( Hold slew rate REF[DC] IL[DC]max = falling signal ΔTR 62 1Gb: x4, x8, x16 DDR2 SDRAM Input Slew Rate Derating Nominal slew rate REF region Δ Nominal line Tangent line REF line region ΔTF ...

Page 63

... AC/DC trip points to DQ referenced to V Table 36 (page 66). Table 35 provides the and DH ) for DDR2-533. Table 36 provides the the and DH ) for DDR2-400 1Gb: x4, x8, x16 DDR2 SDRAM Input Slew Rate Derating 1.4 V/ns 1.2 V/ns 1.0 V/ns Δ Δ Δ Δ Δ – ...

Page 64

... Converting the derated base values from DQ referenced the AC/DC trip points to DQ referenced to V ble 34 provides the V -based fully derated values for the DQ ( REF 64 1Gb: x4, x8, x16 DDR2 SDRAM Input Slew Rate Derating 1.4 V/ns 1.2 V/ns 1.0 V/ns Δ Δ Δ ...

Page 65

... DDR2 SDRAM Input Slew Rate Derating and and DH -specified values REF 1.0 V/ns 0.8 V/ns 0.6 V/ns ...

Page 66

... Micron Technology, Inc. reserves the right to change products or specifications without notice. 1Gb: x4, x8, x16 DDR2 SDRAM Input Slew Rate Derating ) at DDR2-533 REF ) REF 1.0 V/ns 0.8 V/ns 0.6 V/ ...

Page 67

... Tangent line Tangent line Nominal line ΔTF ΔTR Tangent line ( Tangent line (V REF[DC] IL[AC]max Setup slew rate = = rising signal ΔTF 67 1Gb: x4, x8, x16 DDR2 SDRAM Input Slew Rate Derating Nominal slew rate REF region IH(AC)min REF(DC) = ΔTR and V IL(DC)max IH(DC)min ...

Page 68

... IS DDQ REF region Tangent line Nominal V SS ΔTR Tangent line ( REF[DC] IL[DC]max Hold slew rate = ΔTR falling signal 68 1Gb: x4, x8, x16 DDR2 SDRAM Input Slew Rate Derating Nominal slew rate REF region Δ IH(DC)min REF(DC) = ΔTF and V IL(DC)max IH(DC)min Nominal ...

Page 69

... DQS# DQS Micron Technology, Inc. reserves the right to change products or specifications without notice. 1Gb: x4, x8, x16 DDR2 SDRAM Input Slew Rate Derating V DDQ V IH(AC)min V IH(DC)min V REF(DC) V IL(DC)min V IL(AC)min V SSQ V DDQ V IH(AC)min V IH(DC)min V REF(DC) VIL(DC)max VIL(AC)max V SSQ © 2004 Micron Technology, Inc. All rights reserved. ...

Page 70

... DDQ Crossing point Vswing SSQ 70 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1Gb: x4, x8, x16 DDR2 SDRAM Input Slew Rate Derating V REF V DDQ V IH(AC)min V IH(DC)min V REF(DC) V IL(DC)max V IL(AC)max V SSQ © 2004 Micron Technology, Inc. All rights reserved. ...

Page 71

... H Power-down exit L 1. All DDR2 SDRAM commands are defined by states of CS#, RAS#, CAS#, WE#, and CKE at Notes: 2. The state of ODT does not affect the states described in this table. The ODT function is 3. “X” means “H or L” (but a defined logic level) for valid I 4. BA2 is only applicable for densities ≥ ...

Page 72

... Issue DESELECT or NOP commands, or allowable commands to the other bank, on any clock edge occurring during these states. Allowable commands to the other bank are determined by its current state and this table, and according to Table 39 (page 74). 72 1Gb: x4, x8, x16 DDR2 SDRAM Command/Action t RP has been met, and any READ burst is com- t RCD has been met ...

Page 73

... NOP commands must be applied on each positive clock edge during these states): Refresh: Starts with registration of a REFRESH command and ends when t met. After RFC is met, the DDR2 SDRAM will be in the all banks idle state. Accessing Starts with registration of the LOAD MODE command and ends when t mode MRD has been met ...

Page 74

... A READ burst has been initiated with auto precharge disabled and has not yet terminated. Write: A WRITE burst has been initiated with auto precharge disabled and has not yet terminated. 74 1Gb: x4, x8, x16 DDR2 SDRAM Command/Action t RP has been met, and any READ t RCD has been met. ...

Page 75

... WRITE or WRITE with auto precharge DESELECT The DESELECT function (CS# HIGH) prevents new commands from being executed by the DDR2 SDRAM. The DDR2 SDRAM is effectively deselected. Operations already in progress are not affected. DESELECT is also referred to as COMMAND INHIBIT. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. V 6/10 EN ...

Page 76

... If auto precharge is selected, the row being accessed will be pre- charged at the end of the WRITE burst; if auto precharge is not selected, the row will remain open for subsequent accesses. DDR2 SDRAM also supports the AL feature, which allows a READ or WRITE command to be issued prior to command to the internal device by AL clock cycles. ...

Page 77

... Mode Register (MR) The mode register is used to define the specific mode of operation of the DDR2 SDRAM. This definition includes the selection of a burst length, burst type, CAS latency, operat- ing mode, DLL RESET, write recovery, and power-down mode, as shown in Figure 35 (page 78) ...

Page 78

... Burst Length Burst length is defined by bits M0–M2, as shown in Figure 35. Read and write accesses to the DDR2 SDRAM are burst-oriented, with the burst length being programmable to either four or eight. The burst length determines the maximum number of column loca- tions that can be accessed for a given READ or WRITE command. ...

Page 79

... Figure 35 (page 78). When bit M7 is “1,” no other bits of the mode register are programmed. Programming bit M7 to “1” places the DDR2 SDRAM into a test mode that is only used by the manufacturer and should not be used. No operation or functionality is guaranteed if M7 bit is “1.” ...

Page 80

... Write Recovery Write recovery (WR) time is defined by bits M9–M11, as shown in Figure 35 (page 78). The WR register is used by the DDR2 SDRAM during WRITE with auto precharge opera- tion. During WRITE with auto precharge operation, the DDR2 SDRAM delays the inter- nal auto precharge operation by WR clocks (programmed in bits M9–M11) from the last data burst. An example of WRITE with auto precharge is shown in Figure 64 (page 112). WR values clocks may be used for programming bits M9– ...

Page 81

... DDR2 SDRAM also supports a feature called posted CAS additive latency (AL). This fea- ture allows the READ command to be issued prior to internal command to the DDR2 SDRAM by AL clocks. The AL feature is described in further detail in Posted CAS Additive Latency (AL) (page 84). Examples and are shown in Figure 36; both assume READ command is registered at clock edge n, and the clocks, the data will be available nominally coincident with clock edge (this assumes ...

Page 82

... OCD operation, all three bits must be set to “1” for the OCD default state, then set to “0” before initialization is finished. 82 1Gb: x4, x8, x16 DDR2 SDRAM Extended Mode Register (EMR) t MRD before initiating any subsequent opera- ...

Page 83

... The output disable feature is intended to be used during I characterization of read current. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev DQSCK parameters. 83 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1Gb: x4, x8, x16 DDR2 SDRAM Extended Mode Register (EMR) © 2004 Micron Technology, Inc. All rights reserved. DD ...

Page 84

... In this operation, the DDR2 SDRAM allows a READ or WRITE command to be issued prior to using this feature would set held for the time of the AL before it is issued internally to the DDR2 SDRAM device controlled by the sum of AL and CL CL. WRITE latency (WL) is equal to RL minus one clock × ...

Page 85

... WRITE n Command DQS, DQS Notes PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev NOP NOP NOP AC, DQSCK, and T2 T3 NOP NOP t RCD (MIN 1Gb: x4, x8, x16 DDR2 SDRAM Extended Mode Register (EMR NOP NOP NOP Transitioning Data t DQSQ NOP NOP NOP Transitioning Data Micron Technology, Inc. reserves the right to change products or specifications without notice. © ...

Page 86

... Extended mode register (EMR2) Extended mode register (EMR3) grammed to “0.” served for future use and must be programmed to “0.” 86 1Gb: x4, x8, x16 DDR2 SDRAM Extended Mode Register 2 (EMR2) t MRD before initiating any subsequent opera Address bus ...

Page 87

... Extended mode register (EMR) Extended mode register (EMR2) Extended mode register (EMR3) programmed to “0.” served for future use and must be programmed to “0.” 87 1Gb: x4, x8, x16 DDR2 SDRAM Extended Mode Register 3 (EMR3) t MRD before initiating any subsequent opera Address bus ...

Page 88

... Initialization Figure 42: DDR2 Power-Up and Initialization DDR2 SDRAM must be powered up and initialized in a predefined manner. Operational procedures other than those specified may result in unde- fined operation. Figure 42 illustrates, and the notes outline, the sequence required for power-up and initialization DDL V VTD 1 ...

Page 89

... TT to the ODT ball (all other inputs may be undefined; I/Os and outputs must be less than V during voltage ramp time to avoid DDR2 SDRAM device latch-up). V DDQ plied directly to the device; however, least one of the following two sets of conditions ( must be met to obtain a stable ...

Page 90

... Issue a LOAD MODE command to the EMR to enable OCD default by setting bits E7, E8, 13. Issue a LOAD MODE command to the EMR to enable OCD exit by setting bits E7, E8, and 14. The DDR2 SDRAM is now initialized and ready for normal operation 200 clock cycles af- 15. DM represents DM for the x4, x8 configurations and UDM, LDM for the x16 configura- 16 ...

Page 91

... ACTIVATE Before any READ or WRITE commands can be issued to a bank within the DDR2 SDRAM, a row in that bank must be opened (activated), even when additive latency is used. This is accomplished via the ACTIVATE command, which selects both the bank and the row to be activated. ...

Page 92

... READ Row Col Row Col Bank b Bank b Bank c Bank c t FAW (MIN 3.75ns FAW (MIN) = 37.5ns. 92 1Gb: x4, x8, x16 DDR2 SDRAM ACT READ NOP NOP Row Col Bank d Bank d t RRD (MIN) = 7.5ns, Micron Technology, Inc. reserves the right to change products or specifications without notice. ...

Page 93

... READ burst as long as the interruption occurs on a 4-bit boundary due to the 4n prefetch architecture of DDR2 SDRAM. As shown in Figure 48 (page 97), READ burst operations may not be interrupted or truncated with any other command except another READ com- mand ...

Page 94

... READ NOP NOP Bank a, Col ( READ NOP NOP Bank a, Col ( AC, DQSCK, and 94 1Gb: x4, x8, x16 DDR2 SDRAM T3 T3n T4 T4n NOP NOP T4n NOP NOP T3n T4 T4n NOP NOP DO n Transitioning Data t DQSQ. Micron Technology, Inc. reserves the right to change products or specifications without notice. ...

Page 95

... READ Bank, Bank, Col n Col b t CCD READ NOP READ Bank, Bank, Col n Col b t CCD AC, DQSCK, and 95 1Gb: x4, x8, x16 DDR2 SDRAM T5n T3 T3n T4 T4n T5 NOP NOP NOP T5n T2n T3 T3n T4 T4n T5 NOP NOP NOP DO n Transitioning Data t DQSQ. Micron Technology, Inc. reserves the right to change products or specifications without notice. ...

Page 96

... NOP READ Bank, Bank, Col n Col READ NOP NOP READ Bank, Bank, Col n Col AC, DQSCK, and tive READs. 96 1Gb: x4, x8, x16 DDR2 SDRAM T3n T4 T4n T5 T6 T6n T7 NOP NOP NOP NOP T4n T5 T5n NOP NOP NOP NOP DO n Transitioning Data t DQSQ. ...

Page 97

... T2 can be either same bank or different bank). terrupting READ command NOP NOP WRITE AC, DQSCK, and t RTP is the minimum time from the rising clock edge that initiates the last 4-bit 97 1Gb: x4, x8, x16 DDR2 SDRAM Valid Valid Valid Transitioning Data t CK from previous READ. ...

Page 98

... READ NOP NOP NOP AL + BL/2 - 2CK + MAX ( t RTP 2CK) Bank ≥t RAS (MIN) ≥t RC (MIN) t RTP ≥ 2 clocks AC, DQSCK, and 98 1Gb: x4, x8, x16 DDR2 SDRAM NOP NOP ACT Bank a Valid ≥ (MIN) Transitioning Data Don’t Care t DQSQ NOP PRE ...

Page 99

... READ with Auto Precharge If A10 is high when a READ command is issued, the READ with auto precharge function is engaged. The DDR2 SDRAM starts an auto precharge operation on the rising clock edge that (BL/2) cycles later than the read with auto precharge command provi- t ded edge, the start point of the auto precharge operation will be delayed until satisfied ...

Page 100

... CK NOP 1 NOP 1 READ 2 Col n 5 Bank x t RCD RAS these times. but to when the device begins to drive or no longer drives, respectively. order. 100 1Gb: x4, x8, x16 DDR2 SDRAM T7n T8 NOP 1 PRE 3 NOP 1 NOP 1 t RTP 4 All banks One bank Bank ...

Page 101

... NOP commands are shown for ease of illustration; other commands may be valid at Notes ( the case shown. 3. The DDR2 SDRAM internally delays auto precharge until both 4. Enable auto precharge. 5. I/O balls, when entering or exiting High-Z, are not referenced to a specific voltage level data-out from column n; subsequent elements are applied in the programmed PDF: 09005aef821ae8bf 1GbDDR2.pdf – ...

Page 102

... DQSQ is derived at each DQS clock edge, is not cumulative over time, begins with DQS transitions, and ends with the last valid transition of DQ. T2 and at T2n are “early DQS,” are “nominal DQS,” and at T3n are “late DQS.” derived from HP 102 1Gb: x4, x8, x16 DDR2 SDRAM T2n T3 T3n DQSQ 2 t DQSQ 2 t DQSQ ...

Page 103

... CH clock transitions collectively when a bank is active. t DQSQ is derived at each DQS clock edge, is not cumulative over time, begins with DQS transitions, and ends with the last valid transition of DQ. lower byte, and UDQS defines the upper byte. 103 1Gb: x4, x8, x16 DDR2 SDRAM T3 T3n ...

Page 104

... I/O balls, when entering or exiting High-Z, are not referenced to a specific voltage level, WRITE WRITE bursts are initiated with a WRITE command. DDR2 SDRAM uses WL equal to RL minus one clock cycle ( 1CK) (see READ (page 76)). The starting column and bank addresses are provided with the WRITE command, and auto precharge is either enabled or disabled for that access ...

Page 105

... WRITE burst as long as the interruption occurs on a 4-bit boundary due to the 4n-prefetch architec- ture of DDR2 SDRAM. WRITE burst operations may not be interrupted or truncated with any command except another WRITE command, as shown in Figure 60 (page 108). ...

Page 106

... Rev CK# CK WRITE NOP Bank a, Col b WL ± t DQSS DQSS DQSS 106 1Gb: x4, x8, x16 DDR2 SDRAM T2 T2n T3 T3n T4 NOP NOP NOP DQSS DQSS Transitioning Data Don’t Care t DQSS. Micron Technology, Inc. reserves the right to change products or specifications without notice. ...

Page 107

... Bank, Bank, Col b Col n WL ± DQSS CK# CK WRITE NOP NOP Bank, Col b WL ± t DQSS 107 1Gb: x4, x8, x16 DDR2 SDRAM T2n T3 T3n T4 T4n T5 T5n NOP NOP NOP Transitioning Data t DQSS. T2n T3 T3n T4 T4n T5 T5n WRITE NOP NOP Bank, Col n ...

Page 108

... NOP 2 Valid 5 Valid issued to banks used for WRITEs at T0 and T2. starts with T7 and not T5 (because from MR and not the truncated length and T2 can be either same bank or different bank). terrupting WRITE command. 108 1Gb: x4, x8, x16 DDR2 SDRAM NOP 2 NOP 2 Valid 4 Valid ...

Page 109

... WTR is required for any READ following a WRITE to the same device, but it is not re- quired between module ranks. t WTR is referenced from the first positive CK edge after the last data-in pair. greater. 109 1Gb: x4, x8, x16 DDR2 SDRAM NOP READ NOP NOP ...

Page 110

... referenced from the first positive CK edge after the last data-in pair. and WRITE commands may be to different banks, in which case the PRECHARGE command could be applied earlier. 110 1Gb: x4, x8, x16 DDR2 SDRAM NOP NOP NOP t WR Transitioning Data t DQSS not required and Micron Technology, Inc. reserves the right to change products or specifications without notice. © ...

Page 111

... Bank x t RCD ± t DQSS (NOM) these times DSH is applicable during DQSS (MIN) and is referenced from T6 DSS is applicable during DQSS (MAX) and is referenced from T7. 111 1Gb: x4, x8, x16 DDR2 SDRAM T5 T5n T6 T6n T7 T8 NOP 1 NOP 1 NOP 1 NOP RAS 5 t DQSL t DQSH t WPST ...

Page 112

... WL ± t DQSS (NOM) t WPRE these times. rounding up to the next integer value DSH is applicable during DQSS (MIN) and is referenced from T6 DSS is applicable during DQSS (MAX) and is referenced from T7. 112 1Gb: x4, x8, x16 DDR2 SDRAM T5 T5n T6 T6n T7 T8 NOP 1 NOP 1 NOP 1 NOP RAS ...

Page 113

... WR starts at the end of the data burst regardless of the data mask condition DSH is applicable during DQSS (MIN) and is referenced from T7 DSS is applicable during DQSS (MAX) and is referenced from T8. 113 1Gb: x4, x8, x16 DDR2 SDRAM T9 T6 T6n T7 T7n T8 NOP 1 NOP 1 NOP RAS ...

Page 114

... DSH (MIN) generally occurs during t DSS (MIN) generally occurs during t RP timing applies. When the PRECHARGE (ALL) com- t RPA timing applies, regardless of the number of banks opened. 114 1Gb: x4, x8, x16 DDR2 SDRAM T3 T3n T4 t DSS 2 t DSH 1 t DSS DQSL t DQSH ...

Page 115

... REFRESH The commercial temperature DDR2 SDRAM requires REFRESH cycles at an average in- terval of 7.8125µs (MAX) and all rows in all banks must be refreshed at least once every 64ms. The refresh period begins when the REFRESH command is registered and ends t RFC (MIN) later. The average interval must be reduced to 3.9µs (MAX) when T ceeds +85° ...

Page 116

... First, the differential clock must be stable and meet prior to CKE going back to HIGH. Once CKE is HIGH ( with three clock registrations), the DDR2 SDRAM must have NOP or DESELECT com- mands issued for ments is used to apply NOP or DESELECT commands for 200 clock cycles before applying any other command ...

Page 117

... XSNR is required before any nonREAD command can be applied. off ( TT ing self refresh at state T1. t XSRD (200 cycles of CK) is required before a READ command can be applied at state Td0. refresh. 117 1Gb: x4, x8, x16 DDR2 SDRAM Tb0 Tc0 Ta2 t ISXR 2 t CKE 3 NOP 4 NOP 4 ...

Page 118

... Figure 70 (page 121)–Figure 77 (page 124). Table 44 (page 120) is the CKE Truth Table. DDR2 SDRAM requires CKE to be registered HIGH (active) at all times that an access is in progress—from the issuing of a READ or WRITE command until completion of the burst. Thus, a clock suspend is not supported. For READs, a burst completion is defined when the read postamble is satisfied ...

Page 119

... XARDS timing is used for exit active power-down to READ command if slow exit is selec- ted via MR (bit 12 = 1). the DLL was not in a locked state when CKE went LOW, the DLL must be reset after exiting power-down mode for proper READ operation. 119 1Gb: x4, x8, x16 DDR2 SDRAM Power-Down Mode ...

Page 120

... CKE (n) is the logic state of CKE at clock edge n; CKE ( was the state of CKE at the Notes: 2. Current state is the state of the DDR2 SDRAM immediately prior to clock edge n. 3. Command (n) is the command registered at clock edge n, and action ( result of 4. The state of ODT does not affect the states described in this table. The ODT function is 5. Power-down modes do not perform any REFRESH operations. The duration of power- 6. “ ...

Page 121

... Power-down or self refresh entry may occur after the READ burst completes. PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev NOP NOP Valid entry NOP NOP entry is at T6. 121 1Gb: x4, x8, x16 DDR2 SDRAM Power-Down Mode NOP 1 Valid DO DO Power-down 2 or self refresh entry Transitioning Data NOP 1 Valid Valid DO DO ...

Page 122

... NOP NOP Valid cur later at Ta1, prior to RP being satisfied next integer CK. 122 1Gb: x4, x8, x16 DDR2 SDRAM Power-Down Mode NOP 1 Valid Valid t WTR Power-down or self refresh entry 1 Transitioning Data T5 Ta0 Ta1 Valid 1 Valid NOP WR 2 Power-down or self refresh entry Indicates a break in ...

Page 123

... REFRESH REFRESH command. Precharge power-down entry occurs prior to fied Valid ACT VALID VATE command. Active power-down entry occurs prior to 123 1Gb: x4, x8, x16 DDR2 SDRAM Power-Down Mode T2 T3 NOP t CKE (MIN) Power-down 1 entry Don’t Care t RFC (MIN) being satis NOP ...

Page 124

... PRE Valid All banks A10 vs Single bank CKE 1 x PRECHARGE command. Precharge power-down entry occurs prior to isfied Valid LM Valid 124 1Gb: x4, x8, x16 DDR2 SDRAM Power-Down Mode T2 T3 NOP t CKE (MIN Power-down 1 entry Don’t Care NOP NOP t CKE (MIN) t MRD ...

Page 125

... Precharge Power-Down Clock Frequency Change When the DDR2 SDRAM is in precharge power-down mode, ODT must be turned off and CKE must logic LOW level. A minimum of two differential clock cycles must pass after CKE goes LOW before clock frequency may change. The device input clock frequency is allowed to change only within minimum and maximum operating frequen- cies specified for the particular speed grade ...

Page 126

... If CKE asynchronously drops LOW during any valid operation (including a READ or WRITE burst), the memory controller must satisfy the timing parameter turning off the clocks. Stable clocks must exist at the CK, CK# inputs of the DRAM be- fore CKE is raised HIGH, at which time the normal initialization sequence must occur (see Initialization) ...

Page 127

... V must be valid at all times. DD DDL DDQ TT REF represents DQS, DQS#, UDQS, UDQS#, LDQS, LDQS#, RDQS, and RDQS# for the appropri- ate configuration (x4, x8, x16). completion of the burst. 127 1Gb: x4, x8, x16 DDR2 SDRAM T5 Ta0 CKE (MIN) 1 NOP 2 4 High-Z High-Z ...

Page 128

... AXPD (MIN) is not satisfied because ODT LOW occurs at state Ta0 AXPD (MIN) is not satisfied, AOFPD timing parameters apply. t AXPD (MIN) is satisfied, 128 1Gb: x4, x8, x16 DDR2 SDRAM t AOF timing parameters are applied, as shown t AOFPD timing parameters apply. t AONPD timing parameters apply. t ...

Page 129

... Active power-down slow (asynchronous) Precharge power-down (asynchronous AOND/ AOFD (synchronous AONPD/ AOFPD (asynchronous) 129 1Gb: x4, x8, x16 DDR2 SDRAM Synchronous t t AXPD (8 CKs) First CKE latched HIGH Any mode except self refresh mode t AOND/ Micron Technology, Inc. reserves the right to change products or specifications without notice. ...

Page 130

... MOD window until Valid Valid Valid Valid Valid Valid t AOND TT t AON (MIN) t AON (MAX) 130 1Gb: x4, x8, x16 DDR2 SDRAM t MOD (MAX) updates the R setting. TT Ta2 Ta3 Ta4 NOP NOP NOP 2 t MOD t IS Undefined New setting Indicates a break in time scale t MOD is met ...

Page 131

... Valid Valid Valid Valid Valid Valid t AONPD (MAX) t AONPD (MIN) t AOFPD (MIN) Transitioning NOP NOP NOP TT TT Transitioning R TT 131 1Gb: x4, x8, x16 DDR2 SDRAM Valid Valid Valid Valid Valid Valid Valid Valid t AOFPD (MAX) R Unknown NOP NOP NOP t ANPD (MIN) ...

Page 132

... CK# CK Command CKE ODT R ODT R PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev NOP NOP NOP TT TT Transitioning R TT 132 1Gb: x4, x8, x16 DDR2 SDRAM NOP NOP NOP NOP t ANPD (MIN) t AOND t AON (MAX) t AON (MIN) t AONPD (MAX) t AONPD (MIN) R Unknown Micron Technology, Inc. reserves the right to change products or specifications without notice. ...

Page 133

... PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev Ta0 NOP NOP NOP NOP t AXPD (MIN) Indicates a break in R Unknown TT time scale 133 1Gb: x4, x8, x16 DDR2 SDRAM Ta1 Ta2 Ta3 Ta4 NOP NOP NOP NOP t AOFD t AOF (MIN) t AOFPD (MAX) t AOFPD (MIN Transitioning Micron Technology, Inc ...

Page 134

... Rev Ta0 NOP NOP NOP NOP t AXPD (MIN) Indicates a break time scale times occur. 134 1Gb: x4, x8, x16 DDR2 SDRAM Ta1 Ta2 Ta3 Ta4 NOP NOP NOP NOP t AOND t AON (MAX) t AON (MIN) t AONPD (MAX) t AONPD (MIN) Unknown R ...

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