TZA3046UN1 NXP Semiconductors, TZA3046UN1 Datasheet
TZA3046UN1
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TZA3046UN1 Summary of contents
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TZA3046 Fiber Channel/Gigabit Ethernet transimpedance amplifier Rev. 01 — 19 May 2006 1. General description The TZA3046 is a transimpedance amplifier with Automatic Gain Control (AGC), designed to be used in Fiber Channel/Gigabit Ethernet (FC/GE) fiber optic links. It amplifies ...
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Philips Semiconductors 4. Ordering information Table 1: Type number TZA3046U 5. Block diagram C VCC I IDREF_MON IDREF_MON DREF R IDREF_MON C DREF D PHOTO I PIN IPHOTO 2 Fig 1. Block diagram TZA3046_1 Product data sheet ...
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Philips Semiconductors 6. Pinning information 6.1 Pinning Fig 2. Pin configuration 6.2 Pin description Table 2: Bonding pad description Bonding pad locations with respect to the center of the die (see Symbol Pad X Y DREF 1 493.6 140 IPHOTO ...
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Philips Semiconductors Table 2: Bonding pad description Bonding pad locations with respect to the center of the die (see Symbol Pad X Y GND 11 486.4 278.6 GND 12 346.4 278.6 OUTQ 13 206.4 278.6 OUT 14 66.4 278.6 AGC ...
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Philips Semiconductors The parasitic capacitance can be minimized through: 1. Reducing the capacitance of the PIN diode. This is achieved by proper choice of PIN diode and typically a high reverse voltage. 2. Reducing the parasitics around the input pad. ...
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Philips Semiconductors 7.2 Automatic gain control The TZA3046 transimpedance amplifier can handle input currents from 2 1.7 mA which is equivalent to a dynamic range (electrical equivalent with 28 dB optical). At low input currents, ...
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Philips Semiconductors For applications where the transimpedance is controlled by the TIA it is advised to leave the AGC pads unconnected to achieve fast attack and decay times. The AGC function can be overruled by applying a voltage to pad ...
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Philips Semiconductors 8. Limiting values Table 3: In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter tot T amb stg 9. Characteristics Table 4: Characteristics Typical values ...
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Philips Semiconductors Table 4: Characteristics …continued Typical values and V j range and supply voltage range; all voltages are measured with respect to ground; unless otherwise specified. Symbol Parameter Bias voltage: pad DREF R resistance ...
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Philips Semiconductors 10. Application information For maximum freedom on bonding location, 2 outputs are available for OUT and OUTQ. The outputs should be used in pairs: pad 14 with pad 7 or pad 8 with pad 13. Pad 8 is ...
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DC- PATTERN GENERATOR DATA 55 CLOCK Total impedance of the test circuit ( calculated by the equation Z tot(tc) Typical values 330 , Fig 9. Test circuit NETWORK ANALYZER ...
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Philips Semiconductors 12. Bare die information Fig 10. Bonding pad locations Table 5: Parameter Glass passivation Bonding pad dimension Metallization Thickness Die dimension Backing Attach temperature Attach time 13. Package outline Not applicable. TZA3046_1 Product data sheet Fiber Channel/Gigabit Ethernet ...
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Philips Semiconductors 14. Handling information 14.1 General Inputs and outputs are protected against electrostatic discharge in normal handling. However completely safe you must take normal precautions appropriate to handling MOS devices; see JESD625-A and/or IEC61340-5 . 14.2 Additional ...
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Philips Semiconductors 17. Legal information 17.1 Data sheet status [1][2] Document status Product status Objective [short] data sheet Development Preliminary [short] data sheet Qualification Product [short] data sheet Production [1] Please consult the most recently issued document before initiating or ...
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Philips Semiconductors 19. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . . . . . . ...