PF38F2030W0YTQES LA6Q Micron Technology Inc, PF38F2030W0YTQES LA6Q Datasheet - Page 24
PF38F2030W0YTQES LA6Q
Manufacturer Part Number
PF38F2030W0YTQES LA6Q
Description
Manufacturer
Micron Technology Inc
Datasheet
1.PF38F2030W0YTQES_LA6Q.pdf
(54 pages)
Specifications of PF38F2030W0YTQES LA6Q
Operating Temperature (max)
85C
Mounting
Surface Mount
Lead Free Status / RoHS Status
Compliant
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Table 12: PSRAM AC Characteristics—Asynchronous Write (Sheet 2 of 2)
Notes:
1.
2.
3.
4.
Figure 11: PSRAM Asynchronous WE# controlled Write
Datasheet
24
Symbol
t
t
t
ASKEW
t
t
t
t
CRES
CREH
t
WHZ
CPH
OW
DW
DH
WE# Low time must be limited to t
For ADV# controlled Async Write operation.
Applies when control signals (ADV#, CE#, UB#, LB#) are Active.
For ADV# controlled write t
UB#, LB# and CE# Pulse Width High
Write Enable Low to Output High-Z
End of Write to Output Low-Z
Write Data Setup Time
Write Data Hold Time
CRE SetupTime to CE# and WE# Low
CRE Hold Time From WE# High
Address Skew (Non-Page Access)
A[MAX:0]
UB#/LB#
DQ[15:0]
ADV#
WE#
CE#
tAS
AVS
tBLZ
Parameter
tLZ
and t
CSL
AVH
tWHZ
Max.
apply to CRE signal instead of t
tVS
tCW
tCW
tBW
tBW
tAW
tWP
tWP
tWC
tWC
128-Mbit W18 Family with Synchronous PSRAM
Min
CRES
10
23
—
—
5
0
0
0
and t
tDW
CREH
Max
10
—
—
—
—
—
—
8
.
tWR
tDH
tWPH
tWPH
tOW
Order Number: 311760-10
Units
ns
ns
ns
ns
ns
ns
ns
ns
November 2007
Notes
4
4
3
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