RD28F1604C3T90 Intel, RD28F1604C3T90 Datasheet - Page 37
RD28F1604C3T90
Manufacturer Part Number
RD28F1604C3T90
Description
Manufacturer
Intel
Datasheet
1.RD28F1604C3T90.pdf
(75 pages)
Specifications of RD28F1604C3T90
Operating Supply Voltage (max)
3.3V
Operating Temperature (max)
85C
Mounting
Surface Mount
Lead Free Status / RoHS Status
Not Compliant
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5.9
Table 18.
Datasheet
SRAM AC Characteristics—Read Operations
SRAM AC Characteristics—Read Operations
Note:
1.
2.
3.
4.
C3 SCSP Flash Memory
R10
R12
R11
R1
R2
R3
R4
R5
R6
R7
R8
R9
#
Intel
See
At any given temperature and voltage condition, t
device and from device to device interconnection.
Sampled, but not 100% tested.
Timings of t
conditions and are not referenced to output voltage levels.
t
t
t
t
t
t
t
t
t
t
t
t
®
RC
AA
CO1,
OE
BA
LZ1
OLZ
HZ1
OHZ
OH
BLZ
BHZ
Figure 9 “AC Waveform: SRAM Read Operations” on page
Advanced+ Boot Block Flash Memory (C3) SCSP Family
Sym
, t
, t
t
LZ2
HZ2
CO2
HZ
Order Number: 252636, Revision: 004
and t
Read Cycle Time
Address to Output Delay
S-CS1#, S-CS2 to Output Delay
S-OE# to Output Delay
S-UB#, LB# to Output Delay
S-CS1#, S-CS2 to Output in Low Z
S-OE# to Output in Low Z
S-CS1#, S-CS2 to Output in High Z
S-OE# to Output in High Z
Output Hold from Address, S-CS1#,
S-CS2, or S-OE# Change, Whichever Occurs
First
S-UB#, S-LB# to Output in Low Z
S-UB#, S-LB# to Output in High Z
OHZ
are defined as the time at which the outputs achieve the open circuit
Parameter
HZ
(1)
(Max) is less than and t
Voltage Range
Density
38.
Note
2,3,4
2,3
3,4
3
3
3
LZ
(Max) both for a given
Min
2.7 V– 3.3 V
70
–
–
–
–
5
0
0
0
0
0
0
2/4/8-Mbit
26 Aug 2005
Max
70
70
35
70
25
25
25
–
–
–
–
–
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
37
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