MT47H64M8CF-3:F Micron Technology Inc, MT47H64M8CF-3:F Datasheet - Page 108
MT47H64M8CF-3:F
Manufacturer Part Number
MT47H64M8CF-3:F
Description
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Datasheet
1.MT47H64M8CF-3F.pdf
(132 pages)
Specifications of MT47H64M8CF-3:F
Organization
64Mx8
Density
512Mb
Address Bus
16b
Access Time (max)
450ps
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
180mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT47H64M8CF-3:F
Manufacturer:
MICRON
Quantity:
8 000
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Figure 61: WRITE-to-PRECHARGE
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. R 12/10 EN
Command
Address
t DQSS (NOM)
t DQSS (MIN)
t DQSS (MAX)
DQS#
DQS#
DQS#
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
Bank a,
WRITE
Col b
T0
Notes:
WL + t DQSS
WL - t DQSS
WL + t DQSS
NOP
1. Subsequent rising DQS signals must align to the clock within
2. DI b = data-in for column b.
3. Three subsequent elements of data-in are applied in the programmed order following
4. BL = 4, CL = 3, AL = 0; thus, WL = 2.
5.
6. The PRECHARGE and WRITE commands are to the same bank. However, the PRECHARGE
7. A10 is LOW with the WRITE command (auto precharge is disabled).
T1
DI b.
t
and WRITE commands may be to different banks, in which case
the PRECHARGE command could be applied earlier.
WR is referenced from the first positive CK edge after the last data-in pair.
DI
b
NOP
T2
DI
b
DI
b
T2n
1
NOP
1
T3
108
1
T3n
T4
NOP
Micron Technology, Inc. reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
T5
NOP
Transitioning Data
t WR
© 2004 Micron Technology, Inc. All rights reserved.
t
T6
DQSS.
NOP
t
WR is not required and
(a or all)
T7
Bank,
PRE
Don’t Care
t RP
WRITE
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