MT41J256M8HX-15E:D Micron Technology Inc, MT41J256M8HX-15E:D Datasheet - Page 154

no-image

MT41J256M8HX-15E:D

Manufacturer Part Number
MT41J256M8HX-15E:D
Description
MICMT41J256M8HX-15E:D 2GB:X4,X8,X16 DDR3
Manufacturer
Micron Technology Inc
Type
DDR3 SDRAMr
Series
-r
Datasheets

Specifications of MT41J256M8HX-15E:D

Organization
256Mx8
Address Bus
18b
Maximum Clock Rate
1.333GHz
Operating Supply Voltage (typ)
1.5V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Supply Current
165mA
Pin Count
78
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Format - Memory
RAM
Memory Type
DDR3 SDRAM
Memory Size
2G (256M x 8)
Speed
667MHz
Interface
Parallel
Voltage - Supply
1.425 V ~ 1.575 V
Operating Temperature
0°C ~ 95°C
Package / Case
78-TFBGA
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT41J256M8HX-15E:D
Manufacturer:
SAMSUNG
Quantity:
1 001
Part Number:
MT41J256M8HX-15E:D
Manufacturer:
MICRON
Quantity:
11 200
Part Number:
MT41J256M8HX-15E:D
Manufacturer:
MICRON21
Quantity:
1 684
Part Number:
MT41J256M8HX-15E:D
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT41J256M8HX-15E:D
Manufacturer:
MICRON/美光
Quantity:
20 000
Company:
Part Number:
MT41J256M8HX-15E:D
Quantity:
5 845
Part Number:
MT41J256M8HX-15E:D TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Table 77:
Figure 95: Active Power-Down Entry and Exit
PDF: 09005aef826aaadc/Source: 09005aef82a357c3
DDR3_D4.fm - Rev G 2/09 EN
DRAM State
Command
Active (any bank open)
Precharged
(all banks precharged)
Address
CK#
CKE
CK
Power-Down Modes
Valid
Valid
T0
t IH
t CK
Enter power-down
t IS
mode
MR1[12]
While in either power-down state, CKE is held LOW, RESET# is held HIGH, and a stable
clock signal must be maintained. ODT must be in a valid state but all other input signals
are a “Don’t Care.” If RESET# goes LOW during power-down, the DRAM will switch out of
power-down mode and go into the reset state. After CKE is registered LOW, CKE must
remain LOW until
down duration is
The power-down states are synchronously exited when CKE is registered HIGH (with a
required NOP or DES command). CKE must be maintained HIGH until
satisfied. A valid, executable command may be applied after power-down exit latency,
t
Table 77.
For certain CKE-intensive operations, for example, repeating a power-down exit to
refresh to power-down entry sequence, the number of clock cycles between power-down
exit and power-down entry may not be sufficient enough to keep the DLL properly
updated. In addition to meeting
power-down exit and power-down entry, two other conditions must be met. First,
must be satisfied before issuing the REFRESH command. Second,
fied before the next power-down may be entered. An example is shown in Figure 105 on
page 159.
NOP
XP
T1
“Don’t
Care”
t CH
1
0
t
XPDLL have been satisfied. A summary of the power-down modes is listed in
t CPDED
t CL
DLL State
NOP
T2
Off
On
On
t
PD (MAX) (9 ×
t
PD (MIN) has been satisfied. The maximum time allowed for power-
t PD
Power-Down
Slow
Exit
Fast
Fast
Ta0
t IH
154
t
t
PD when the REFRESH command is used in between
REFI).
Exit power-down
t
t
t
(READ, RDAP, or ODT on)
t
XP to any other valid command
XP to any other valid command
XPDLL to commands that require the DLL to be locked
XP to any other valid command
t IS
Micron Technology, Inc., reserves the right to change products or specifications without notice.
mode
NOP
Ta1
2Gb: x4, x8, x16 DDR3 SDRAM
Relevant Parameters
NOP
Ta2
t CKE (MIN)
Indicates a Break in
Time Scale
t XP
©2006 Micron Technology, Inc. All rights reserved.
NOP
t
XPDLL must be satis-
Ta3
t
CKE has been
Operations
Valid
Valid
Don’t Care
Ta4
t
XP

Related parts for MT41J256M8HX-15E:D