MT41J256M8HX-15E:D Micron Technology Inc, MT41J256M8HX-15E:D Datasheet - Page 62

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MT41J256M8HX-15E:D

Manufacturer Part Number
MT41J256M8HX-15E:D
Description
MICMT41J256M8HX-15E:D 2GB:X4,X8,X16 DDR3
Manufacturer
Micron Technology Inc
Type
DDR3 SDRAMr
Series
-r
Datasheets

Specifications of MT41J256M8HX-15E:D

Organization
256Mx8
Address Bus
18b
Maximum Clock Rate
1.333GHz
Operating Supply Voltage (typ)
1.5V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Supply Current
165mA
Pin Count
78
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Format - Memory
RAM
Memory Type
DDR3 SDRAM
Memory Size
2G (256M x 8)
Speed
667MHz
Interface
Parallel
Voltage - Supply
1.425 V ~ 1.575 V
Operating Temperature
0°C ~ 95°C
Package / Case
78-TFBGA
Lead Free Status / RoHS Status
Compliant

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Table 49:
Figure 27:
PDF: 09005aef826aaadc/Source: 09005aef82a357c3
DDR3_D3.fm - Rev G 2/09 EN
Parameter/Condition
Output leakage current: DQ are disabled;
0V ≤ V
Output slew rate: Differential; For rising and falling
edges, measure between V
and V
Output differential cross-point voltage
Differential high-level output voltage
Differential low-level output voltage
Delta R
Test load for AC timing and output slew rates
OHDIFF
OUT
ON
≤ V
between pull-up and pull-down for DQ/DQS
(
AC
DD
Differential Output Driver Characteristics
All voltages are referenced to Vss
DQ Output Signal
) = +0.2 × V
Q; ODT is disabled; ODT is HIGH
Notes:
DD
OLDIFF
1. RZQ of 240Ω (±1%) with RZQ/7 enabled (default 34Ω driver) and is applicable after proper
2. V
3. See Figure 29 on page 63 for the test load configuration.
4. See Table 51 on page 65 for the output slew rate.
5. See Table 38 on page 58 for additional information.
6. See Figure 28 on page 63 for an example of a differential output signal.
Q
ZQ calibration has been performed at a stable temperature and voltage (V
V
(
SS
REF
AC
Q = V
) = –0.2 × V
= V
DD
SS
).
Q/2.
DD
Q
Output Characteristics and Operating Conditions
V
V
Symbol
OHDIFF
MM
OLDIFF
SRQ
V
62
OX
I
OZ
PUPD
(
DIFF
AC
(
(
Output to V
AC
AC
)
)
)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
V
REF
Min
TT
–10
–5
5
- 150
(V
2Gb: x4, x8, x16 DDR3 SDRAM
DD
+0.2 × V
–0.2 × V
Q/2) via 25Ω resistor
V
MAX output
V
MIN output
OL
OH
DD
DD
(
V
(
AC
AC
Q
Q
REF
)
)
Max
+10
©2006 Micron Technology, Inc. All rights reserved.
+5
12
+ 150
DD
Units
V/ns
mV
µA
%
Q = V
V
V
DD
Notes
1, 2, 3
1, 4
1, 4
1, 5
,
1
1
3

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