MT46V64M8TG-6LIT:D Micron Technology Inc, MT46V64M8TG-6LIT:D Datasheet - Page 7
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MT46V64M8TG-6LIT:D
Manufacturer Part Number
MT46V64M8TG-6LIT:D
Description
Manufacturer
Micron Technology Inc
Datasheet
1.MT46V64M8TG-6LITD.pdf
(91 pages)
Specifications of MT46V64M8TG-6LIT:D
Lead Free Status / RoHS Status
Not Compliant
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Functional Block Diagrams
Figure 3:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
512Mb_DDR_x4x8x16_D2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN
BA0, BA1
A0–A12,
RAS#
CAS#
WE#
CKE
CK#
CS#
CK
15
128 Meg x 4 Functional Block Diagram
ADDRESS
REGISTER
MODE REGISTERS
CONTROL
LOGIC
15
The 512Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory
containing 536,870,912 bits. It is internally configured as a 4-bank DRAM.
COUNTER
REFRESH
13
12
2
13
ADDRESS
2
ROW-
MUX
COUNTER/
CONTROL
COLUMN-
ADDRESS
LATCH
BANK
LOGIC
13
DECODER
ADDRESS
BANK0
LATCH
ROW-
&
11
1
8192
SENSE AMPLIFIERS
(8,192 x 2,048 x 8)
DM MASK LOGIC
I/O GATING
DECODER
MEMORY
COLUMN
7
ARRAY
BANK0
2048
(x8)
BANK1
BANK2
16384
BANK3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
8
8
512Mb: x4, x8, x16 DDR SDRAM
8
LATCH
READ
Out
CK
CK
DRIVERS
WRITE
FIFO
4
4
&
Functional Block Diagrams
CK
In
COL0
MUX
MASK
DATA
COL0
8
2
1
1
4
4
GENERATOR
REGISTERS
©2000 Micron Technology, Inc. All rights reserved.
INPUT
DQS
4
1
1
4
4
DATA
1
1
4
1
DRVRS
DQS
CK
DLL
RCVRS
DQ0–DQ3
DQS
DM
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