MC9S08GT60ACFDE Freescale, MC9S08GT60ACFDE Datasheet - Page 55
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MC9S08GT60ACFDE
Manufacturer Part Number
MC9S08GT60ACFDE
Description
Manufacturer
Freescale
Datasheet
1.MC9S08GT60ACFDE.pdf
(302 pages)
Specifications of MC9S08GT60ACFDE
Cpu Family
HCS08
Device Core Size
8b
Frequency (max)
40MHz
Interface Type
I2C/SCI/SPI
Total Internal Ram Size
4KB
# I/os (max)
39
Number Of Timers - General Purpose
4
Operating Supply Voltage (typ)
2.5/3.3V
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
1.8/2.08V
On-chip Adc
8-chx10-bit
Instruction Set Architecture
CISC
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
48
Package Type
QFN EP
Program Memory Type
Flash
Program Memory Size
60KB
Lead Free Status / RoHS Status
Compliant
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4.4.5
An access error occurs whenever the command execution protocol is violated.
Any of the following specific actions will cause the access error flag (FACCERR) in FSTAT to be set.
FACCERR must be cleared by writing a 1 to FACCERR in FSTAT before any command can be processed.
4.4.6
Block protection prevents program or erase changes for flash memory locations in a designated address
range. Mass erase is disabled when any block of flash is protected. The MC9S08GBxxA/GTxxA allows a
block of memory at the end of flash, and/or the entire flash memory to be block protected. A disable control
bit and a 3-bit control field, allows the user to set the size of this block. A separate control bit allows block
protection of the entire flash memory array. All seven of these control bits are located in the FPROT
register (see
At reset, the high-page register (FPROT) is loaded with the contents of the NVPROT location which is in
the nonvolatile register block of the flash memory. The value in FPROT cannot be changed directly from
application software so a runaway program cannot alter the block protection settings. If the last 512 bytes
of flash which includes the NVPROT register is protected, the application program cannot alter the block
protection settings (intentionally or unintentionally). The FPROT control bits can be written by
background debug commands to allow a way to erase a protected flash memory.
One use for block protection is to block protect an area of flash memory for a bootloader program. This
bootloader program then can be used to erase the rest of the flash memory and reprogram it. Because the
bootloader is protected, it remains intact even if MCU power is lost in the middle of an erase and
reprogram operation.
Freescale Semiconductor
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Writing to a flash address before the internal flash clock frequency has been set by writing to the
FCDIV register
command buffer is empty.)
Writing a second time to a flash address before launching the previous command (There is only
one write to flash for every command.)
Writing a second time to FCMD before launching the previous command (There is only one write
to FCMD for every command.)
Writing to any flash control register other than FCMD after writing to a flash address
Writing any command code other than the five allowed codes (0x05, 0x20, 0x25, 0x40, or 0x41)
to FCMD
Accessing (read or write) any flash control register other than the write to FSTAT (to clear FCBEF
and launch the command) after writing the command to FCMD
The MCU enters stop mode while a program or erase command is in progress (The command is
aborted.)
Writing the byte program, burst program, or page erase command code (0x20, 0x25, or 0x40) with
a background debug command while the MCU is secured (The background debug controller can
only do blank check and mass erase commands when the MCU is secure.)
Writing 0 to FCBEF to cancel a partial command
Writing to a flash address while FCBEF is not set (A new command cannot be started until the
Access Errors
Flash Block Protection
Section 4.6.4, “Flash Protection Register (FPROT and
MC9S08GB60A Data Sheet, Rev. 2
NVPROT)”).
Chapter 4 Memory
55
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