PNX1311EH/G NXP Semiconductors, PNX1311EH/G Datasheet - Page 521
PNX1311EH/G
Manufacturer Part Number
PNX1311EH/G
Description
Manufacturer
NXP Semiconductors
Datasheet
1.PNX1311EHG.pdf
(548 pages)
Specifications of PNX1311EH/G
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Philips Semiconductors
Figure C-6. Packed YUV 4:2:2+α data format for the ICP or VO in Little and Big Endian modes
Figure C-7. Packed YUV 4:2:2 data format for ICP in Little and Big Endian modes
Figure C-8. RBG-16 data format for ICP in Little and Big Endian modes
Pixel half-word data
in memory or PCI
Pixel half-word data
in memory or PCI
Pixel half-word data
in memory or PCI
31
31
31
V1α3
A+3
V0α1
A+3
G1B1
G3B3
V0
V1
A+3
P
P
P
n+1
n+1
n+1
Big Endian Mode
Big Endian Mode
A+2
A+2
Big Endian Mode
Y3
R1G’1
Y1
Y1
R3G’3
Y3
A+2
A+1
A+1
U1α2
U0α0
U1
G0B0
G2B2
U0
A+1
Note: A+0 corresponds to byte-0 lane of SDRAM/Hwy/PCI
Note: A+0 corresponds to byte-0 lane of SDRAM/Hwy/PCI
Note: A+0 corresponds to byte-0 lane of SDRAM/Hwy/PCI
and A+3 corresponds to byte-3 lane of SDRAM/Hwy/PCI
and A+3 corresponds to byte-3 lane of SDRAM/Hwy/PCI
and A+3 corresponds to byte-3 lane of SDRAM/Hwy/PCI
P
P
P
n
n
n
PRELIMINARY SPECIFICATION
A+0
A+0
Y0
Y2
Y0
Y2
R2G’2
A+0
R0G’0
0
0
0
31
31
31
R3G’3
R1G’1
A+3
A+3
Y1
Y3
Y1
Y3
A+3
P
P
P
n+1
n+1
Little Endian Mode
Little Endian Mode
Little Endian Mode
n+1
V0α1
V1α3
A+2
A+2
V0
V1
G1B1
G3B3
A+2
A+1
A+1
R2G’2
R0G’0
A+1
Y0
Y2
Y0
Y2
Endian-ness
P
P
P
n
n
n
U0α0
U1α2
A+0
A+0
U0
U1
G0B0
G2B2
A+0
0
0
C-5
0
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