BSM200GB170DLC Infineon Technologies, BSM200GB170DLC Datasheet - Page 2

• Manufacturer Part Number: BSM200GB170DLC
• Description: IGBT Modules 1700V 200A DUAL
• Manufacturer: Infineon Technologies

Specifications of BSM200GB170DLC

• Configuration: Dual
• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1700 V
• Collector-emitter Saturation Voltage: 2.6 V
• Continuous Collector Current At 25 C: 400 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 1660 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: 62MM
• Ic (max): 200.0 A
• Vce(sat) (typ): 2.6 V
• Technology: IGBT2 Low Loss
• Housing: 62 mm
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Transistor / Transistor
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
Modulinduktivität
stray inductance module
Modulleitungswiderstand, Anschlüsse - Chip
module lead resistance, terminals - chip
Diode / Diode
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Abschaltenergie pro Puls
reverse recovery energy
Charakteristische Werte / Characteristic values
Charakteristische Werte / Characteristic values
Technische Information / Technical Information
I
V
V
I
V
V
I
V
V
I
V
V
I
R
I
R
t
T
Anschlüsse / terminals: 2 - 3
I
I
I
V
V
I
V
V
I
V
V
BSM 200 GB 170 DLC
C
C
C
C
C
C
F
F
F
F
F
P
pro Zweig / per arm, T
GE
GE
GE
GE
GE
GE
GE
GE
Vj
R
R
R
R
R
R
G
G
= 200A, V
= 200A, V
= 200A, V
= 200A, V
= 200A, V
= 200A, V
£ 10µsec, V
= 200A, V
= 200A, V
= 200A, - di
= 200A, - di
= 200A, - di
£125°C, V
= 7,5W, T
= 7,5W, T
= 900V, V
= 900V, V
= 900V, V
= 900V, V
= 900V, V
= 900V, V
= ±15V, R
= ±15V, R
= ±15V, R
= ±15V, R
= ±15V, R
= ±15V, R
= ±15V, R
= ±15V, R
GE
GE
CE
CE
CE
CE
CE
CE
vj
vj
CC
GE
GE
GE
GE
GE
GE
F
F
F
GE
= 125°C, L
= 125°C, L
/dt = 2300A/µs
/dt = 2300A/µs
/dt = 2300A/µs
= 900V
= 900V
= 900V
= 900V
= 900V, V
= 900V, V
= 0V, T
= 0V, T
G
G
G
G
G
G
G
G
=1000V, V
= -15V, T
= -15V, T
= -15V, T
= -15V, T
= -15V, T
= -15V, T
= 7,5W, T
= 7,5W, T
= 7,5W, T
= 7,5W, T
= 7,5W, T
= 7,5W, T
= 7,5W, T
= 7,5W, T
£ 15V, R
2(8)
vj
vj
C
= 25°C
= 125°C
= 25°C
GE
GE
s
s
vj
vj
vj
vj
vj
vj
G
CEmax
vj
vj
vj
vj
vj
vj
vj
vj
= 60nH
= 60nH
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 7,5W
= 25°C
= 25°C
= 25°C
= 25°C
= ±15V
= ±15V
= 125°C
= 125°C
= 125°C
= 125°C
=V
CES
-L
sCE
·di/dt
R
L
CC'+EE'
t
t
E
E
E
I
d,on
d,off
I
V
Q
sCE
RM
SC
t
t
rec
on
off
r
f
F
r
min.
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
typ.
typ.
0,10
0,10
0,10
0,10
0,80
0,90
0,03
0,03
0,60
800
160
200
105
2,1
2,1
90
65
20
60
25
50
BSM200GB170DLC_3.xls
max.
max.
2,5
2,5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
mW
mJ
mJ
µC
µC
mJ
mJ
nH
µs
µs
µs
µs
µs
µs
µs
µs
A
V
V
A
A