BSM200GB170DLC Infineon Technologies, BSM200GB170DLC Datasheet - Page 7

• Manufacturer Part Number: BSM200GB170DLC
• Description: IGBT Modules 1700V 200A DUAL
• Manufacturer: Infineon Technologies

Specifications of BSM200GB170DLC

• Configuration: Dual
• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1700 V
• Collector-emitter Saturation Voltage: 2.6 V
• Continuous Collector Current At 25 C: 400 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 1660 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: 62MM
• Ic (max): 200.0 A
• Vce(sat) (typ): 2.6 V
• Technology: IGBT2 Low Loss
• Housing: 62 mm
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
0,001
0,01
0,1
450
400
350
300
250
200
150
100
1
0,001
50
0
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
0
r
r
i
i
[K/kW]
[K/kW]
t
t
i
i
i
[s]
[s]
Transienter Wärmewiderstand
Transient thermal impedance
200
: IGBT
: IGBT
: Diode
: Diode
BSM 200 GB 170 DLC
400
0,01
600
0,0047
0,0062
27,92
8,37
1
800
V
7(8)
CE
t [s]
0,1
[V]
0,0356
0,0473
24,21
55,32
1000
2
IC,Modul
IC,Chip
V
1200
Z
GE
thJC
= ±15V, R
Zth:Diode
Zth:IGBT
0,0613
0,0473
36,07
55,32
= f (t)
3
1
1400
g
= 7,5 Ohm, T
1600
0,4669
0,2322
11,45
6,35
4
vj
= 125°C
BSM200GB170DLC_3.xls
10
1800