BSM10GD120DN2 Infineon Technologies, BSM10GD120DN2 Datasheet
Home Discrete Semiconductor Products IGBTs - Single BSM10GD120DN2
Manufacturer Part Number
BSM10GD120DN2
Description
IGBT MODULE, 1200V, ECONOPACK3
Manufacturer
Infineon Technologies
Specifications of BSM10GD120DN2
Channel Type
N
Configuration
Hex
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Module Configuration
Six
Dc Collector Current
15A
Collector Emitter Voltage Vces
3.2V
Power Dissipation Max
80W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To
Power Dissipation Pd
80W
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Supplier Unconfirmed
Available stocks
Part Number:
BSM10GD120DN2
Part Number:
BSM10GD120DN2
Part Number:
BSM10GD120DN2
Part Number:
BSM10GD120DN2 E
Part Number:
BSM10GD120DN2 E
Part Number:
BSM10GD120DN2 E3224
BSM 10 GD 120 DN2
IGBT Power Module
• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
Type
BSM 10 GD 120 DN2
BSM 10 GD120DN2E3224
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
Gate-emitter voltage
DC collector current
T
T
Pulsed collector current, t
T
T
Power dissipation per IGBT
T
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
C
C
C
C
C
GE
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 20 k
p
= 1 ms
V
1200V 15A
1200V 15A
CE
I
C
1
Package
ECONOPACK 2
ECONOPACK 2K
V
V
V
I
I
P
T
T
R
R
V
-
-
-
-
Symbol
C
Cpuls
CE
CGR
GE
tot
j
stg
is
thJC
thJCD
Ordering Code
C67076-A2513-A67
C67070-A2513-A67
40 / 125 / 56
-40 ... + 125
Values
+ 150
± 20
1200
1200
2500
F
15
10
30
20
80
16
11
1.52
2
2006-01-31
Unit
V
A
W
°C
K/W
Vac
mm
sec
Related parts for BSM10GD120DN2
BSM10GD120DN2 Summary of contents
BSM 10 GD 120 DN2 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 10 GD 120 DN2 BSM 10 GD120DN2E3224 Maximum Ratings Parameter Collector-emitter voltage ...
BSM 10 GD 120 DN2 Electrical Characteristics Parameter Static Characteristics Gate threshold voltage 0. CE, C Collector-emitter saturation voltage °C ...
BSM 10 GD 120 DN2 Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 150 Gon Rise time V = 600 V, ...
BSM 10 GD 120 DN2 Power dissipation = ( tot C parameter: T 150 ° tot Collector current = (T ) ...
BSM 10 GD 120 DN2 Typ. output characteristics parameter µ ° 17V 16 15V I 13V C 11V ...
BSM 10 GD 120 DN2 Typ. gate charge = ( Gate parameter puls 600 ...
BSM 10 GD 120 DN2 Typ. switching time inductive load , T = 125° par 600 ± ...
BSM 10 GD 120 DN2 Forward characteristics of fast recovery I = f(V ) reverse diode F F parameter =125° 0.0 0.5 1.0 ...
BSM 10 GD 120 DN2 Gehäusemaße / Schaltbild Package outline / Circuit diagramm 9 2006-01-31 ...
Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. ...
Related keywords
BSM10GD120DN2 datasheet BSM10GD120DN2 data sheet BSM10GD120DN2 pdf datasheet BSM10GD120DN2 component BSM10GD120DN2 part BSM10GD120DN2 distributor BSM10GD120DN2 RoHS BSM10GD120DN2 datasheet download