FD200R12KE3 Infineon Technologies, FD200R12KE3 Datasheet

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FD200R12KE3

Manufacturer Part Number
FD200R12KE3
Description
IGBT Transistors 1200V 200A CHOPPER
Manufacturer
Infineon Technologies
Datasheet

Specifications of FD200R12KE3

Configuration
Single
Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
+/- 20 V
Continuous Collector Current At 25 C
200 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
1.04 KW
Maximum Operating Temperature
+ 125 C
Package / Case
IS5a ( 62 mm )-5
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Ic (max)
200.0 A
Vce(sat) (typ)
1.7 V
Technology
IGBT3
Housing
62 mm
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FD200R12KE3
Manufacturer:
EUPEC
Quantity:
27
Part Number:
FD200R12KE3
Manufacturer:
LAMBDA
Quantity:
726
Part Number:
FD200R12KE3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
FD200R12KE3
Quantity:
55
Technische Information / technical information
IGBT-Module
IGBT-modules
62mm C-Serien Modul mit Trench/Feldstopp IGBT3 und EmCon High Efficiency Diode
62mm C-series module with trench/fieldstop IGBT3 and EmCon High Efficiency diode
IGBT-Brems-Chopper / IGBT-brake-chopper
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
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Related parts for FD200R12KE3

FD200R12KE3 Summary of contents

Page 1

... " ? " " " FD200R12KE3 %&' ( )*+ %- ( *+2 %& )*+2 %& )*+2 %& , , ,-. ( ,B.2 %&' ( )*+ , C0) , %&' ( )*+ ( 0 O:2 %&' ( )*+2 ,-. ( ) ,2 , O:2 %&' ( )*+2 ,-. ( ) ,2 ,B. ( ,-. ( %&' ( )*+ ,-. ( ,2 , %&' ( )*+ ,-. ( , ,B. ( X0) , B54 ( ,-. ( , ,B. ( X0) , B54 ( ,-. ( , ,B. ( X0) , B5ZZ ( ,-. ( , ,B. ( X0) , B5ZZ ( ,-. ( , , 8DL U%&'(0 )*+W B54 ( ,-. ( , , > ,DL U%&'(0 )*+W B5ZZ ( ,-- ( ...

Page 2

... Charakteristische Werte / characteristic values : Reverse-Diode / reverse-diode Höchstzulässige Werte / maximum rated values Charakteristische Werte / characteristic values FD200R12KE3 %&' ( )*+ ,< %& )*+ , , 8DL U%&'(0 )*+W ,< , 8DL U%&'(0 )*+W ,< , 8DL U%&'(0 )*+W ,< , c;HGAP ( DcdSPHGP ( %&' ( )*+ ,< %& )*+ , , c;HGAP ( DcdSPHGP ( ,<< 3f< %&' ( )*+ 02 ) 20) ,f %& ...

Page 3

... Technische Information / technical information IGBT-Module IGBT-modules Modul / module FD200R12KE3 # O c;HGAP ( cdSPHGP ( )*+ ,j/ mno 002 +%3 p > AJ VG-. --qr.. %&' 6H %&' 5g > %GAd > > ...

Page 4

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Page 5

... U,-. U,-. U,-. U,-.W ,B. ( X0) ,2 B5ZZ ( ,B. ( X0) ,2 B5ZZ ( N2 %& )*+ N2 %& )*+ ,B. ( X0) ,2 B5ZZ ( ,B. ( X0) ,2 B5ZZ ( N2 %& )*+ N2 %& )*+ 500 3-2 450 3-2 + 400 350 300 250 200 150 100 200 400 600 800 ,-. u,v FD200R12KE3 % % % % wAJa wAJa wAJa wAJa 0,1 0,01 0,001 0,001 ...

Page 6

... U3fW "SPi ( U3fW B54 ( B54 ( B54 ( B54 ( N2 ,-. ( N2 ,-. ( N2 ,-. ( N2 ,-. ( , , , , 30 "SPi2 %& )*+ 120 180 240 300 360 420 480 540 600 3f u8v % % % % wAJa wAJa wAJa wAJa wAJa > 0,01 0,001 0,01 0 FD200R12KE3 "SPi ( U BW "SPi ( U BW "SPi ( U BW "SPi ( ,-. ( 82 ,-. ( 82 ,-. ( 82 ,-. ( ...

Page 7

... Technische Information / technical information IGBT-Module IGBT-modules % % wAJa wAJa wAJa wAJa wAJa 007 2 0,01 0,001 0,01 0 FD200R12KE3 > > > ...

Page 8

... Technische Information / technical information IGBT-Module IGBT-modules Schaltplan / circuit diagram Gehäuseabmessungen / package outlines FD200R12KE3 8 ...

Page 9

... Risk and Quality Assessments; - the conclusion of Quality Agreements establish joint measures of an ongoing product survey, and that we may make delivery depended on the realization of any such measures. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. FD200R12KE3 9 ...

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