BSM200GA120DN2 Infineon Technologies, BSM200GA120DN2 Datasheet - Page 6

• Manufacturer Part Number: BSM200GA120DN2
• Description: IGBT Modules 1200V 200A SINGLE
• Manufacturer: Infineon Technologies

Specifications of BSM200GA120DN2

• Configuration: Single
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 300A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.5 V
• Continuous Collector Current At 25 C: 200 A
• Gate-emitter Leakage Current: 200 nA
• Power Dissipation: 1550 W
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IS6a ( 62 mm )
• Ic (max): 200.0 A
• Vce(sat) (typ): 2.5 V
• Technology: IGBT2 Standard
• Housing: 62 mm
• Lead Free Status / RoHS Status: Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

I
Cpuls
BSM 200 GA 120 DN2
Typ. gate charge
V
parameter: I
Reverse biased safe operating area
I
Cpuls
parameter: V
V
GE
GE
I
C
= (Q
= f(V
2.5
1.5
1.0
0.5
0.0
20
16
14
12
10
V
8
6
4
2
0
0
0
di/dt = 1000A/µs
Gate
CE
200
C puls
200
)
GE
)
,
3000A/µs
5000A/µs
= ± 15 V, t
T
400
= 200 A
j
400
= 150°C
600
600
600 V
800 1000 1200
p
800
1 ms, L < 20 nH
1000
800 V
nC
Q
V
V
Gate
CE
1400
1600
6
I
Typ. capacitances
C = f (V
Short circuit safe operating area
I
Csc
parameter: V
Csc
parameter: V
C
/I
C
= f(V
10
10
10
10
nF
12
-1
8
6
4
2
0
2
1
0
CE
0
0
CE
di/dt = 1000A/µs
° allowed number of
° time between short
short circuit: <1000
circuit: >1s
)
) , T
200
5
GE
GE
3000A/µs
5000A/µs
j
= ± 15 V, t
= 150°C
400
= 0 V, f = 1 MHz
10
600
15
800 1000 1200
20
SC
25
10 µs, L < 20 nH
30
Oct-27-1997
V
V
V
V
CE
CE
Ciss
Coss
Crss
1600
40