BSM200GA120DN2 Infineon Technologies, BSM200GA120DN2 Datasheet - Page 9

• Manufacturer Part Number: BSM200GA120DN2
• Description: IGBT Modules 1200V 200A SINGLE
• Manufacturer: Infineon Technologies

Specifications of BSM200GA120DN2

• Configuration: Single
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 300A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.5 V
• Continuous Collector Current At 25 C: 200 A
• Gate-emitter Leakage Current: 200 nA
• Power Dissipation: 1550 W
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IS6a ( 62 mm )
• Ic (max): 200.0 A
• Vce(sat) (typ): 2.5 V
• Technology: IGBT2 Standard
• Housing: 62 mm
• Lead Free Status / RoHS Status: Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

BSM 200 GA 120 DN2
Circuit Diagram
Package Outlines
Dimensions in mm
Weight: 420 g
9
Oct-27-1997