BSM30GD60DLC Infineon Technologies, BSM30GD60DLC Datasheet - Page 6

• Manufacturer Part Number: BSM30GD60DLC
• Description: IGBT Modules 600V 30A 3-PHASE
• Manufacturer: Infineon Technologies

Specifications of BSM30GD60DLC

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 40A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.95 V
• Continuous Collector Current At 25 C: 40 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 135 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPACK 2A
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
1,2
1,0
0,8
0,6
0,4
0,2
0,0
1,6
1,4
1,2
1,0
0,8
0,6
0,4
0,2
0,0
Schaltverluste (typisch)
Switching losses (typical)
0
0
Schaltverluste (typisch)
Switching losses (typical)
5
10
5
Eon
Eoff
Erec
15
BSM 30 GD 60 DLC
20
10
25
6 (8)
R
I
C
G
E
30
15
I
[A]
C
[ ]
E
on
= 30A , V
R
G,on
on
= f (R
= f (I
= 6,8
35
CC
G
= 300V , T
C
) , E
= = = = R
) , E
G,off
40
20
off
= 6,8
off
vj
= f (R
= 125°C
= f (I
45
, V
CC
C
G
) , E
= 300V, T
) , E
50
25
rec
rec
vj
= f (I
= f (R
= 125°C
Eon
Eoff
Erec
55
C
)
G
BSM 30 GD 60 DLC
)
60
30
2006-01-31