JANTXV2N6796 International Rectifier, JANTXV2N6796 Datasheet

JANTXV2N6796

Manufacturer Part Number
JANTXV2N6796
Description
Manufacturer
International Rectifier
Type
Power MOSFETr
Datasheet

Specifications of JANTXV2N6796

Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.207Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±20V
Drain Current (max)
8A
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 125C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-39
Power Dissipation
25W
Lead Free Status / RoHS Status
Not Compliant
REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET TRANSISTORS
THRU-HOLE (TO-205AF)
Product Summary
The HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt-
age control, very fast switching, ease of parelleling
and temperature stability of the electrical parameters.
They are well suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high energy pulse circuits.
For footnotes refer to the last page
Absolute Maximum Ratings
I D @ V GS = 10V, T C = 100°C
I D @ V GS = 10V, T C = 25°C
www.irf.com
Part Number
IRFF130
P D @ T C = 25°C
T STG
dv/dt
I DM
E AR
E AS
V GS
I AR
T J
BVDSS
100V
R
0.18
DS(on)
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
8.0A
I
D
300 (0.063 in. (1.6mm) from case for 10s)
Features:
n
n
n
n
n
REF:MIL-PRF-19500/557
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
0.98(typical)
-55 to 150
100V, N-CHANNEL
0.20
±20
8.0
5.0
5.5
3 2
2 5
7 5
JANTXV2N6796
TO-39
JANTX2N6796
IRFF130
PD - 90430C
Units
W/°C
V/ns
o
mJ
mJ
W
A
A
V
g
C
01/22/01
1

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JANTXV2N6796 Summary of contents

Page 1

... REF:MIL-PRF-19500/557 I D 8.0A Features: n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling 300 (0.063 in. (1.6mm) from case for 10s 90430C IRFF130 JANTX2N6796 JANTXV2N6796 100V, N-CHANNEL TO-39 Units 8 0.20 W/°C ± — A — mJ 5.5 ...

Page 2

IRFF130 Electrical Characteristics Parameter BV DSS Drain-to-Source Breakdown Voltage BV DSS / T J Temperature Coefficient of Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage Drain ...

Page 3

Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics www.irf.com Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRFF130 3 ...

Page 4

IRFF130 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 8. Maximum Safe Operating Area www.irf.com 13 a& a& a& b ...

Page 5

Fig 9. Maximum Drain Current Vs. Case Temperature Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com D.U. 10V Pulse Width µs Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 10% ...

Page 6

IRFF130 10V 20V Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms ...

Page 7

Foot Notes: Repetitive Rating; Pulse width limited by maximum junction temperature 25V, starting 25°C, Peak 8.0A, Case Outline and Dimensions —TO-205AF IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, ...

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