STM32F207VET6 STMicroelectronics, STM32F207VET6 Datasheet - Page 87

• Manufacturer Part Number: STM32F207VET6
• Description: MCU ARM 512KB FLASH 100LQFP
• Manufacturer: STMicroelectronics
• Series: STM32r

Specifications of STM32F207VET6

• Core Processor: ARM® Cortex-M3™
• Core Size: 32-Bit
• Speed: 120MHz
• Connectivity: CAN, Ethernet, I²C, IrDA, LIN, MMC, SPI, UART/USART, USB OTG
• Peripherals: Brown-out Detect/Reset, DMA, I²S, LCD, POR, PWM, WDT
• Number Of I /o: 82
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Eeprom Size: -
• Ram Size: 132K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 16x12b; D/A 2x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-LFQFP
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11171

STM32F205xx, STM32F207xx
5.3.13
Table 34.
1. TBD stands for “to be defined”.
2. Guaranteed by design, not tested in production.
3. The maximum programming time is measured after 100K erase operations.
4. V
Table 35.
1. Based on characterization, not tested in production.
2. Cycling performed over the whole temperature range.
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the
device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
●
●
Symbol
t
t
t
ERASE128KB
ERASE16KB
ERASE64KB
N
t
Symbol
RET
t
END
VPP
V
PP
t
V
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
FTB: A burst of fast transient voltage (positive and negative) is applied to V
through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant
with the IEC 61000-4-4 standard.
t
I
prog
ME
prog
PP
PP
should only be connected during programming/erasing.
(4)
Endurance
Data retention
Parameter
Flash memory programming with V
Flash memory endurance and data retention
Double word programming
Sector (16 KB) erase time
Sector (64 KB) erase time
Sector (128 KB) erase time
Mass erase time
Programming voltage
V
Minimum current sunk on
the V
Cumulative time during
which V
PP
voltage range
PP
PP
Parameter
pin
is applied
T
T
1 kcycle
1 kcycle
10 kcycles
A
A
= –40 to +105 °C (7 suffix versions)
= –40 to +85 °C (6 suffix versions)
Doc ID 15818 Rev 6
(2)
(2)
(2)
at T
at T
at T
Conditions
A
A
= 85 °C
= 105 °C
A
T
= 55 °C
A
Conditions
= 0 to +40 °C
PP
(1)
Min
2.7
10
7
-
-
-
-
-
-
Electrical characteristics
(2)
Value
Min
30
10
20
TBD
TBD
TBD
10
Typ
6.8
16
-
-
-
-
(1)
Max
100
DD
3.6
9
1
-
-
-
-
-
(3)
(2)
and V
kcycles
Years
Unit
87/163
Unit
hour
mA
µs
V
V
SS