MCP14E8-E/P Microchip Technology, MCP14E8-E/P Datasheet - Page 3

• Manufacturer Part Number: MCP14E8-E/P
• Description: 3A MOSFET Driver 8 PDIP .300in TUBE
• Manufacturer: Microchip Technology

Specifications of MCP14E8-E/P

• Leaded Process Compatible: Yes
• Rohs Compliant: Yes
• Peak Reflow Compatible (260 C): Yes
• Module Configuration: Low Side
• Peak Output Current: 2A
• Output Resistance: 5ohm
• Input Delay: 45ns
• Output Delay: 45ns
• Supply Voltage Range: 4.5V To 18V
• Driver Case Style: DIP
• No. Of Pins: 8

1.0
Absolute Maximum Ratings †
Supply Voltage ................................................................+20V
Input Voltage ............................... (V
Enable Voltage .............................(V
Input Current (V
Package Power Dissipation (T
8L-DFN ........................................................................
8L-PDIP ........................................................................1.12W
8L-SOIC .....................................................................669 mW
DC CHARACTERISTICS
© 2011 Microchip Technology Inc.
Electrical Specifications: Unless otherwise indicated, T
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
Input Voltage
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Switching Time
Rise Time
Fall Time
Propagation Delay Time
Propagation Delay Time
Enable Function (ENB_A, ENB_B)
High-Level Input Voltage
Low-Level Input Voltage
Hysteresis
Enable Pull-up Impedance
Enable Pin Leakage Current
Propagation Delay Time
Propagation Delay Time
Note 1:
2:
3:
ELECTRICAL
CHARACTERISTICS
Parameters
Switching times are ensured by design.
Tested during characterization, not production tested.
Package power dissipation is dependent on the copper pad area of the PCB.
IN
>V
(1)
DD
)................................................50 mA
A
= +50
DD
DD
V
V
R
o
V
I
(2)
Sym
+ 0.3V) to (GND – 5V)
C)
V
R
ENBL
V
R
+ 0.3V) to (GND - 5V)
V
V
EN_H
HYST
V
I
t
t
EN_L
ENBL
t
t
I
t
PK
t
D1
D2
D3
D4
IN
OH
OH
OL
OL
R
F
IH
IN
IL
V
DD
Min
2.4
2.4
0.7
– 0.025
—
—
—
—
—
—
—
—
—
—
—
—
—
—
-1
-5
Note 3
A
Typ
400
1.5
1.3
1.6
1.2
1.6
12
15
45
45
10
35
35
—
—
—
—
5
5
2
= +25°C, with 4.5V ≤ V
† Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this specifica-
tion is not intended. Exposure to maximum rating
conditions for extended periods may affect device
reliability.
V
DD
0.025
Max
0.8
0.8
3.0
30
35
55
55
65
65
—
—
—
—
—
—
1
8
8
+ 0.3
Units
mV
MΩ
µA
µA
ns
ns
ns
ns
ns
ns
V
V
V
Ω
Ω
A
V
V
V
V
DD
MCP14E6/7/8
0V ≤ V
DC Test
DC Test
I
I
V
Figure
C
Figure
C
Figure
Figure
V
V
V
V
ENB_A = ENB_B = GND
V
V
OUT
OUT
≤ 18V.
DD
DD
DD
DD
DD
DD
DD
L
L
= 1000 pF
= 1000 pF
= 12V, Low-to-High Transition
= 12V, High-to-Low Transition
= 18V
= 14V, ENBL = GND
= 12V,
= 12V,
= 12V,
= 10 mA, V
= 10 mA, V
IN
4-1,
4-1,
4-1,
4-1,
≤ V
Conditions
(2)
Figure 4-3
Figure 4-3
Figure
Figure
Figure 4-2
Figure 4-2
DD
DD
DD
DS25006A-page 3
= 18V
= 18V
4-2,
4-2,