MT47H128M4CF-25E:G Micron Technology Inc, MT47H128M4CF-25E:G Datasheet - Page 23
MT47H128M4CF-25E:G
Manufacturer Part Number
MT47H128M4CF-25E:G
Description
IC SDRAM 512MB 800MHZ 60FBGA
Manufacturer
Micron Technology Inc
Series
-r
Specifications of MT47H128M4CF-25E:G
Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
512M (128Mx4)
Speed
2.5ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
60-TFBGA
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT47H128M4CF-25E:G
Manufacturer:
Micron Technology Inc
Quantity:
10 000
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Table 7: Thermal Impedance (Continued)
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. R 12/10 EN
Die Revision
G
1
Package Substrate
60-ball
84-ball
Note:
2-layer
4-layer
2-layer
4-layer
1. Thermal resistance data is based on a number of samples from multiple lots and should
be viewed as a typical number.
Airflow = 0m/s
Θ JA (°C/W)
94.2
76.4
88.8
71.4
Airflow = 1m/s
Electrical Specifications – Absolute Ratings
23
Θ JA (°C/W)
76.5
66.9
71.3
62.1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
Airflow = 2m/s Θ JB (°C/W) Θ JC (°C/W)
Θ JA (°C/W)
70.1
63.1
65.6
58.7
© 2004 Micron Technology, Inc. All rights reserved.
57.3
56.5
52.5
52.0
6.1
6.0
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