MT48H8M16LFB4-75:K TR Micron Technology Inc, MT48H8M16LFB4-75:K TR Datasheet - Page 61
MT48H8M16LFB4-75:K TR
Manufacturer Part Number
MT48H8M16LFB4-75:K TR
Description
Manufacturer
Micron Technology Inc
Type
Mobile SDRAMr
Datasheet
1.MT48H8M16LFB4-75K_TR.pdf
(86 pages)
Specifications of MT48H8M16LFB4-75:K TR
Organization
8Mx16
Density
128Mb
Address Bus
14b
Access Time (max)
8/5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
70mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
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Figure 32: Alternating Bank Write Accesses
PDF: 09005aef832ff1ea
128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN
Command
BA0, BA1
Address
DQM
CLK
CKE
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
Bank 0
ACTIVE
T0
Row
Row
t CKH
t CMH
t AH
t AH
t AH
t RCD - bank 0
t RAS - bank 0
t RC - bank 0
t RRD
t CK
T1
Note:
NOP
Enable auto precharge
t CMS
t CL
1. For this example, BL = 4.
Column m
t DS
Bank 0
WRITE
T2
D
t CMH
IN
t DH
t CH
t DS
T3
NOP
D
IN
t DH
t DS
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
Bank 1
ACTIVE
Row
T4
Row
D
IN
t DH
61
t RCD - bank 1
t DS
T5
D
NOP
IN
t DH
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t WR - bank 0
Enable auto precharge
t DS
Column b
Bank 1
WRITE
T6
D
IN
t DH
t DS
T7
NOP
D
IN
t DH
t RP - bank 0
©2008 Micron Technology, Inc. All rights reserved.
WRITE Operation
t DS
T8
NOP
D
IN
t DH
t DS
Bank 0
Row
Row
T9
ACTIVE
D
t RCD - bank 0
t WR - bank 1
IN
t DH
Don’t Care
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