HYB39S256800CTL-8 Infineon Technologies, HYB39S256800CTL-8 Datasheet - Page 2

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HYB39S256800CTL-8

Manufacturer Part Number
HYB39S256800CTL-8
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of HYB39S256800CTL-8

Lead Free Status / Rohs Status
Not Compliant
Ordering Information
Type
HYB 39S256400CT-7.5
HYB 39S256400CT-8
HYB 39S256400CT-8A
HYB 39S256800CT-7.5
HYB 39S256800CT-8
HYB 39S256800CT-8A
HYB 39S256160CT-7.5
HYB 39S256160CT-8
HYB 39S256160CT-8A
HYB39S256xx0CTL
Pin Description and Pinouts:
INFINEON Technologies
BA0, BA1
A0-A12
CLK
CKE
RAS
CAS
WE
CS
Column Address Strobe
Row Address Strobe
Speed Grade
PC133-333-520
PC100-222-620
PC100-322-620
PC133-333-520
PC100-222-620
PC100-322-620
PC133-333-520
PC100-222-620
PC100-322-620
PC100-xxx-620
Address Inputs
Clock Enable
Write Enable
Bank Select
Chip Select
Clock Input
Package
P-TSOP-54-2 (400mil)
P-TSOP-54-2 (400mil)
P-TSOP-54-2 (400mil)
P-TSOP-54-2 (400mil)
P-TSOP-54-2 (400mil)
P-TSOP-54-2 (400mil)
P-TSOP-54-2 (400mil)
P-TSOP-54-2 (400mil)
P-TSOP-54-2 (400mil)
P-TSOP-54-2 (400mil)
2
DQM, LDQM, UDQM
Vddq
Vssq
Vdd
Vss
DQ
NC
HYB39S256400/800/160CT(L)
256MBit Synchronous DRAM
Description
133MHz 4B x 16M x 4 SDRAM
125MHz 4B x 16M x 4 SDRAM
125MHz 4B x 16M x 4 SDRAM
133MHz 4B x 8M x 8 SDRAM
125MHz 4B x 8M x 8 SDRAM
125MHz 4B x 8M x 8 SDRAM
133MHz 4B x 4M x 16 SDRAM
125MHz 4B x 4M x 16 SDRAM
125MHz 4B x 4M x 16 SDRAM
Low Power Versions (on request)
Power for DQ’s (+ 3.3V)
Data Input /Output
Ground for DQ’s
Power (+3.3V)
not connected
Data Mask
Ground
8.00

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