MT29F1G08ABADAWP:D Micron Technology Inc, MT29F1G08ABADAWP:D Datasheet - Page 76

• Manufacturer Part Number: MT29F1G08ABADAWP:D
• Description: MICMT29F1G08ABADAWP:D 1GB SLC NAND 34NM
• Manufacturer: Micron Technology Inc

Specifications of MT29F1G08ABADAWP:D

• Cell Type: NAND
• Density: 8Gb
• Interface Type: Parallel
• Address Bus: 27b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP-I
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 128M
• Supply Current: 35mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

PDF: 09005aef83e5ffed
m68a.pdf – Rev. D 06/10 EN
Notes:
Note:
Table 19: Capacitance
Table 20: Test Conditions
Description
Input capacitance
Input/output capacitance (I/O)
Parameter
Input pulse levels
Input rise and fall times
Input and output timing levels
Output load
1. These parameters are verified in device characterization and are not 100% tested.
2. Test conditions: T
1. These parameters are verified in device characterization and are not 100% tested.
C
= 25°C; f = 1 MHz; V
76
3.3V
1.8V
Symbol
C
C
Micron Technology, Inc. reserves the right to change products or specifications without notice.
IO
IN
1Gb x8, x16: NAND Flash Memory
IN
= 0V.
1 TTL GATE and CL = 30pF
1 TTL GATE and CL = 30pF
Max
10
10
Electrical Specifications
0.0V to V
Value
V
5ns
CC
/2
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CC
Unit
pF
pF
Notes
1, 2
1, 2
Notes
1
1