CP2201-GM Silicon Laboratories Inc, CP2201-GM Datasheet - Page 74

IC ETH CTRLR SNGL-CHIP 28QFN

CP2201-GM

Manufacturer Part Number
CP2201-GM
Description
IC ETH CTRLR SNGL-CHIP 28QFN
Manufacturer
Silicon Laboratories Inc
Datasheets

Specifications of CP2201-GM

Package / Case
48-TQFP, 48-VQFP
Controller Type
Ethernet Controller, MAC/10Base-T
Interface
Parallel/Serial
Voltage - Supply
3.1 V ~ 3.6 V
Current - Supply
75mA
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Ethernet Connection Type
1000BASE-T or 100BASE-T or 10BASE-T
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Product
Ethernet Controllers
Standard Supported
IEEE 802.3
Data Rate
10 Mbps or 100 Mbps or 1000 Mbps
Maximum Operating Temperature
+ 85 C
No. Of Ports
1
Ethernet Type
IEEE 802.3
Interface Type
Parallel
Supply Current
60mA
Supply Voltage Range
3.1V To 3.6V
Operating Temperature Range
-40°C To +85°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
336-1326 - KIT REF DESIGN PWR OVER ETHERNET336-1316 - KIT EVAL FOR CP2201 ETH CTRLR
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
336-1313

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CP2201-GM
Manufacturer:
SiliconL
Quantity:
48
Part Number:
CP2201-GMR
Manufacturer:
SILICON LABS/芯科
Quantity:
20 000
CP2200/1
13.2. Reading the Flash Memory
Flash reads occur much faster than Flash write or erase operations and are completed within the minimum read
strobe time specified by the parallel host interface. Flash is read using the FLASHADDRH:FLASHADDRL,
FLASHDATA, and FLASHAUTORD registers. The FLASHAUTORD register provides an efficient method of
accessing sequential data in Flash by automatically incrementing the Flash address pointer after each read.
13.2.1. Flash Read Procedure
13.2.2. Multiple Byte Flash Read Procedure
74
Table 18. Flash Electrical Characteristics
V
Flash Size
Endurance
Erase Cycle Time
Write Cycle Time
DD
= 3.1 to 3.6 V, –40 to +85 °C unless otherwise specified.
Step 1: Set FLASHADDRH:FLASHADDRL to the address of the byte to be read.
Step 2: Read the value of the byte from FLASHDATA.
Step 1: Set FLASHADDRH:FLASHADDRL to the address of the first byte to be read.
Step 2: For each byte, read the value from FLASHAUTORD.
Parameters
Conditions
Rev. 1.0
8192
Min
20k
40
100k
Typ
55
11
Max
70
Erase/
Units
bytes
Write
ms
µs

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