MAX1959ETP-T Maxim Integrated Products, MAX1959ETP-T Datasheet

no-image

MAX1959ETP-T

Manufacturer Part Number
MAX1959ETP-T
Description
DC/DC Switching Converters WCDMA/NCDMA HBT PA Mgt IC
Manufacturer
Maxim Integrated Products
Datasheet

Specifications of MAX1959ETP-T

Lead Free Status / Rohs Status
Lead free / RoHS Compliant
The MAX1958/MAX1959 power amplifier (PA) power-
management ICs (PMICs) integrate an 800mA, dynami-
cally adjustable step-down converter, a 5mA Rail-to-
Rail
temperature sensor to power a heterojunction bipolar
transistor (HBT) PA in W-CDMA and N-CDMA cell
phones.
The high-efficiency, pulse-width modulated (PWM), DC-
to-DC buck converter is optimized to provide a guaran-
teed output current of 800mA. The output voltage is
dynamically controlled to produce any fixed-output volt-
age in the range of 0.75V to 3.4V (MAX1958) or 1V to
3.6V (MAX1959), with settling time less than 30µs for a
full-scale change in voltage and current. The 1MHz PWM
switching frequency allows the use of small external
components while pulse-skip mode reduces quiescent
current to 190µA with light loads. The converter utilizes a
low on-resistance internal MOSFET switch and synchro-
nous rectifier to maximize efficiency and minimize
external component count. The 100% duty-cycle opera-
tion allows for an IC dropout voltage of only 130mV (typ)
at 600mA load.
The micropower op amp is used to provide bias to the
HBT PA to maximize efficiency. The amplifier features
active discharge in shutdown for full PA bias control. It
has 5mA rail-to-rail drive capability, 800kHz gain-band-
width product, and 120dB open-loop voltage gain.
The precision temperature sensor measures tempera-
tures between -40°C to +125°C, with linear tempera-
ture-to-voltage analog output characteristics.
The MAX1958/MAX1959 are available in a 20-pin 5mm
5mm thin QFN package (0.8mm max height).
19-2659; Rev 0; 10/02
Typical Operating Circuit and Functional Diagram appear at
end of data sheet.
Rail-to-Rail is a registered trademark of Nippon Motorola, Ltd.
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
®
operational amplifier (op amp), and a precision
W-CDMA and N-CDMA Cellular Phones
Wireless PDAs and Modems
________________________________________________________________ Maxim Integrated Products
W-CDMA/N-CDMA Cellular Phone HBT PA
General Description
Applications
o Step-Down Converter
o Operational Amplifier
o Temperature Sensor
o 20-Pin Thin QFN (5mm
*EP = Exposed paddle.
MAX1958ETP
MAX1959ETP
TOP VIEW
Dynamically Adjustable Output Voltage from
0.75V to 3.4V (MAX1958)
Dynamically Adjustable Output Voltage from
1V to 3.6V (MAX1959)
800mA Guaranteed Output Current
130mV IC Dropout at 600mA Load
Low Quiescent Current
1MHz Fixed-Frequency PWM operation
16% to 100% Duty-Cycle Operation
No External Schottky Diode Required
Soft-Start
190µA (typ) in Skip Mode (MAX1958)
3mA (typ) in PWM Mode
0.1µA (typ) in Shutdown Mode
5mA Rail-to-Rail Output
Active Discharge in Shutdown
800kHz Gain-Bandwidth Product
120dB Open-Loop Voltage Gain (R
Accurate Sensor -11.7mV/°C Slope
-40°C to +125°C-Rated Temperature Range
PART
SHDN2
AGND
AOUT
TOUT
REF
Management ICs
1
2
3
4
5
-40°C to +85°C
-40°C to +85°C
TEMP RANGE
Ordering Information
5mm x 5mm
THIN QFN
MAX1958/
MAX1959
Pin Configuration
5mm), 0.8mm Height (max)
15
14
13
12
11
PIN-PACKAGE
20 Thin QFN-EP*
20 Thin QFN-EP
PWM
INP
IN
LX
PGND
Features
L
= 100kΩ)
1

Related parts for MAX1959ETP-T

MAX1959ETP-T Summary of contents

Page 1

... Gain-Bandwidth Product 120dB Open-Loop Voltage Gain (R o Temperature Sensor Accurate Sensor -11.7mV/°C Slope -40°C to +125°C-Rated Temperature Range o 20-Pin Thin QFN (5mm PART MAX1958ETP ✕ MAX1959ETP *EP = Exposed paddle. Applications TOP VIEW Management ICs Features = 100kΩ) L ✕ 5mm), 0.8mm Height (max) ...

Page 2

W-CDMA/N-CDMA Cellular Phone HBT PA Management ICs ABSOLUTE MAXIMUM RATINGS SHDN1, SHDN2, IN, INP, OUT, ADJ, SHDN3, PWM PGND ...................................-0.3V to +6V CC AGND to PGND .....................................................-0.3V to +0.3V COMP, REF to AGND ....................................-0 IN+, IN-, ...

Page 3

W-CDMA/N-CDMA Cellular Phone HBT PA ELECTRICAL CHARACTERISTICS (STEP-DOWN CONVERTER) (continued 3.6V, V SHDN1 INP IN VCC = TOUT = unconnected 0.1µF, T REF noted. Typical values are ...

Page 4

W-CDMA/N-CDMA Cellular Phone HBT PA Management ICs ELECTRICAL CHARACTERISTICS (OP AMP 2.7V, V SHDN2 INP IN VCC OUT = LX = TOUT = REF = ...

Page 5

W-CDMA/N-CDMA Cellular Phone HBT PA ELECTRICAL CHARACTERISTICS (OP AMP) (continued 2.7V, V SHDN2 INP IN VCC OUT = LX = TOUT = REF = COMP ...

Page 6

W-CDMA/N-CDMA Cellular Phone HBT PA Management ICs ELECTRICAL CHARACTERISTICS (STEP-DOWN CONVERTER 3.6V, V SHDN1 INP IN VCC AOUT = TOUT = unconnected 0.1µF, T REF otherwise noted.) (Note 5) PARAMETER ...

Page 7

W-CDMA/N-CDMA Cellular Phone HBT PA ELECTRICAL CHARACTERISTICS (STEP-DOWN CONVERTER) (continued 3.6V, V SHDN1 INP IN VCC AOUT = TOUT = unconnected 0.1µF, T REF otherwise noted.) (Note 5) PARAMETER CONTROLLER ...

Page 8

W-CDMA/N-CDMA Cellular Phone HBT PA Management ICs ELECTRICAL CHARACTERISTICS (OP AMP 2.7V, V SHDN2 INP IN VCC OUT = LX = TOUT = REF = ...

Page 9

W-CDMA/N-CDMA Cellular Phone HBT PA ELECTRICAL CHARACTERISTICS (TEMPERATURE SENSOR 2.7V, V SHDN3 INP IN VCC OUT = REF = unconnected 0.01µF (min), T TOUT PARAMETER T A Temperature Sensor Error ...

Page 10

W-CDMA/N-CDMA Cellular Phone HBT PA Management ICs (T = +25°C, unless otherwise noted.) A DROPOUT VOLTAGE ACROSS P-CHANNEL MOSFET vs. LOAD CURRENT 300 250 200 150 100 100 200 300 400 500 600 700 800 LOAD CURRENT ...

Page 11

W-CDMA/N-CDMA Cellular Phone HBT +25°C, unless otherwise noted.) A ENTERING AND EXITING SHUTDOWN V SHDN OUT 400µs/div LOAD TRANSIENT PWM = AGND V OUT AC-COUPLED I OUT 100µs/div LOAD TRANSIENT V OUT AC-COUPLED V ...

Page 12

W-CDMA/N-CDMA Cellular Phone HBT PA Management ICs (T = +25°C, unless otherwise noted AMP INPUT OFFSET VOLTAGE vs. COMMON-MODE VOLTAGE 600 2.5V VCC 500 400 300 200 100 0 0 0.5 1 ...

Page 13

W-CDMA/N-CDMA Cellular Phone HBT +25°C, unless otherwise noted AMP GAIN AND PHASE vs. FREQUENCY 80 2kΩ || 470pF -20 -40 0 FREQUENCY (Hz) OP AMP SMALL-SIGNAL TRANSIENT RESPONSE (INVERTING) ...

Page 14

W-CDMA/N-CDMA Cellular Phone HBT PA Management ICs (T = +25°C, unless otherwise noted.) A TEMPERATURE SENSOR ERROR vs. TEMPERATURE 1.5 1.0 0.5 0 -0.5 -1.0 -1.5 -40 -25 - TEMPERATURE (°C) PIN NAME 1 AOUT Op-Amp Output. AOUT ...

Page 15

W-CDMA/N-CDMA Cellular Phone HBT PA PIN NAME High-Current Supply Voltage Input. Connect to a 2.6V to 5.5V source. Bypass to PGND with a low- 14 INP ESR 4.7µF capacitor. Connect to pin 16. PWM/Skip-Mode Input. Drive low to use PWM ...

Page 16

W-CDMA/N-CDMA Cellular Phone HBT PA Management ICs to 600mA. Some jitter is normal during the transition from pulse-skipping mode to PWM mode with loads around 75mA. This has no adverse impact on regulation. Forced-PWM Operation To force PWM operation at ...

Page 17

W-CDMA/N-CDMA Cellular Phone HBT PA the P-channel switch and controls entry into pulse-skip- ping mode. A third current-sense comparator monitors current through the internal N-channel MOSFET to pre- vent excessive reverse currents and determines when to turn off the synchronous ...

Page 18

W-CDMA/N-CDMA Cellular Phone HBT PA Management ICs The temperature-to-voltage transfer function has an approximately linear negative slope and can be described by the following equation × − TOUT ° ...

Page 19

W-CDMA/N-CDMA Cellular Phone HBT PA Solving for R gives: C × OUT = Calculate the high-frequency compensation pole to cancel the zero created by the output capacitor’s equivalent series resistance (ESR ...

Page 20

W-CDMA/N-CDMA Cellular Phone HBT PA Management ICs 3.4 3.0 1.0 0.4 0 300 PA SUPPLY CURRENT (mA) Figure 3. Typical W-CDMA Power Amplifier Load Profile SHDN2 may result in indeterminate logic levels, and could adversely affect op-amp operation. ...

Page 21

W-CDMA/N-CDMA Cellular Phone HBT 2.6V TO 5.5V R2 20Ω C7 0.1µF OFFSET Figure 4. Op-Amp Configuration tures must be mounted on, or close to, the object whose temperature they are intended to measure. There is a good ...

Page 22

W-CDMA/N-CDMA Cellular Phone HBT PA Management ICs that the rise in die temperature due to the converter is a good approximation of the total rise in die temperature. Therefore ≈ + Θ × Θ ...

Page 23

W-CDMA/N-CDMA Cellular Phone HBT PA Management ICs REF COMP ADJ ERROR AMPLIFIER SHDN1 PWM IN+ IN- SHDN2 AGND ______________________________________________________________________________________ REFERENCE OSCILLATOR MAX1958/ MAX1959 COMP CLAMP SLOPE COMPENSATION PWM CURRENT SENSE COMPARATOR OP AMP ACTIVE DISCHARGE AGND TRANSISTOR COUNT: 3704 PROCESS: ...

Page 24

... Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time. 24 ____________________Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 © 2002 Maxim Integrated Products Printed USA is a registered trademark of Maxim Integrated Products ...

Related keywords