NTE331 NTE Electronics, Inc., NTE331 Datasheet
NTE331
Manufacturer Part Number
NTE331
Description
Transistor; NPN; 100 V (Max.); 100 V (Max.); 5 V (Max.); 15 A (Max.); 40 @ 4 V
Manufacturer
NTE Electronics, Inc.
Type
Audio Amplifier, Powerr
Datasheet
1.NTE331.pdf
(2 pages)
Specifications of NTE331
Current, Base
5 A
Current, Collector
15 A
Current, Collector Cutoff
500 μA
Current, Emitter
15 A
Current, Gain
40 to 250
Frequency
3 MHz
Gain, Dc Current, Maximum
250
Gain, Dc Current, Minimum
40
Package Type
TO-220
Polarity
NPN
Power Dissipation
90 W
Primary Type
Si
Resistance, Thermal, Junction To Case
1.4 °C/W
Transistor Type
NPN
Voltage, Breakdown, Collector To Emitter
100 V
Voltage, Collector To Base
100 V
Voltage, Collector To Emitter
100 V
Voltage, Collector To Emitter, Saturation
3 V
Voltage, Emitter To Base
5 V
Voltage, Saturation, Collector To Emitter
1 V
Lead Free Status / Rohs Status
RoHS Compliant part
Description:
The NTE331 (NPN) and NTE332 (PNP) are silicon epitaxial–base complementary power transistors
in a TO–220 plastic package intended for use in power linear and switching applications.
Absolute Maximum Ratings:
Collector–Base Voltage (I
Collector–Emitter Voltage (I
Emitter–Base Voltage (I
Emitter Current, I
Collector Current, I
Base Current, I
Total Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance Junction–to–Case, R
Electrical Characteristics: (T
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Collector–Emitter Sustaining
Collector–Emitter Saturation
Voltage
Voltage
Parameter
B
E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
Silicon Complementary Transistors
E
= 0), V
C
NTE331 (NPN) & NTE332 (PNP)
= 0), V
B
= 0), V
+25 C), P
Audio Power Amp, Switch
stg
C
V
EBO
Symbol
= +25 C unless otherwise specified)
V
CEO(sus)
CBO
CE(sat)
I
I
I
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CBO
CEO
EBO
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
I
I
I
I
I
I
I
E
E
B
C
B
C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 0, V
= 0, V
= 0, V
= 0, I
= 0, V
= 5A, I
= 10A, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
Test Conditions
CB
CB
CE
EB
B
= 100mA, Note 1
B
= 0.5A, Note 1
= 100V
= 100V, T
= 50V
= 5V
= 2.5A, Note 1
C
= +150 C
Min
100
–
–
–
–
–
–
Typ
–
–
–
–
–
–
–
–65 to +150 C
1.4 C/W Max
Max Unit
500
5
1
1
–
1
3
+150 C
100V
100V
mA
mA
mA
90W
V
V
V
15A
15A
A
5V
5A
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NTE331 Summary of contents
Page 1
... NTE331 (NPN) & NTE332 (PNP) Silicon Complementary Transistors Description: The NTE331 (NPN) and NTE332 (PNP) are silicon epitaxial–base complementary power transistors in a TO–220 plastic package intended for use in power linear and switching applications. Absolute Maximum Ratings: Collector–Base Voltage (I E Collector–Emitter Voltage (I Emitter– ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Base–Emitter Saturation Voltage Base–Emitter Voltage DC Current Gain Transistion Frequency Note 1. Pulsed; Pulse Duration = 300 s, Duty Cycle = 1.5%. .147 (3.75) Dia Max .070 (1.78) Max .100 (2.54) = +25 C unless ...