NTE270 NTE Electronics, Inc., NTE270 Datasheet
NTE270
Manufacturer Part Number
NTE270
Description
Transistor, NPN; TO218; PNP Bipolar; 100 V (Max.); 100 V (Max.); 5 V (Max.)
Manufacturer
NTE Electronics, Inc.
Type
Amplifier, Powerr
Datasheet
1.NTE271.pdf
(2 pages)
Specifications of NTE270
Current, Collector
10 A (Max.)
Current, Collector Cutoff
2.0 mA (Max.) @ 50 V
Current, Gain
500
Current, Input
500 mA
Current, Output
10 A
Package Type
TO-218
Polarity
NPN
Power Dissipation
125 W
Primary Type
Si
Resistance, Thermal, Junction To Ambient
35.7
Resistance, Thermal, Junction To Case
1.0 °C⁄W (Max.)
Temperature Range, Junction, Operating
-65 to +150 °C
Thermal Resistance, Junction To Ambient
35.7 °C⁄W (Max.)
Transistor Polarity
PNP Bipolar
Voltage, Collector To Base
100 V (Max.)
Voltage, Collector To Emitter
100 V (Max.)
Voltage, Collector To Emitter, Saturation
3 V
Voltage, Emitter To Base
5 V (Max.)
Voltage, Input
5 V
Voltage, Output
100 V
Voltage, Saturation, Collector To Emitter
2.0 V (Max.) @ 5 A
Voltage, Sustaining, Collector To Emitter
100 V (Min.) @ 30 mA
Collector-emitter Sustaining Voltage
VCEO (sus) == 100 V Min @ 30 mA
Description:
The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in
a TO218 type package designed for general purpose amplifier and low frequency switching applications.
Features:
D High DC Current Gain: h
D Collector–Emitter Sustaining Voltage: V
D Monolithic Construction with Built–In Base–Emitter Shunt Resistor
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Continuous Base Current, I
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Note 1. Pulse Width = 5ms, Duty Cycle
Electrical Characteristics: (T
Note 2. Pulse Test: Pulse Width = 300 s, Duty Cycle
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
Continuous
Peak (Note 1)
Parameter
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Complementary Transistors
EB
CB
C
NTE270 (NPN) & NTE271 (PNP)
Darlington Power Amp, Switch
B
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FE
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
C
= 1000 Min @ I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
Symbol
CEO(sus)
I
I
I
CEO
CBO
EBO
D
J
thJC
10%.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO(sus)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
C
I
V
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
CE
CB
BE
= 5A, V
= 30mA, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 5V
= 50V, I
= 100V, I
= 100V Min @ 30mA
Test Conditions
CE
2%.
B
B
E
= 4V
= 0
= 0, Note 2
= 0
Min
100
–
–
–
Typ
–
–
–
–
–65 to +150 C
–65 to +150 C
Max Unit
2.0
1.0
2.0
–
35.7 C/W
1.0 C/W
500mA
125W
100V
100V
mA
mA
mA
V
10A
15A
5V
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NTE270 Summary of contents
Page 1
... NTE270 (NPN) & NTE271 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications. Features: D High DC Current Gain Collector– ...
Page 2
... ON Characteristics (Note 2) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Switching Characteristics (Resistive Load) Delay Time Rise Time Storage Time Fall Time Note 2. Pulse Test: Pulse Width = 300 s, Duty Cycle NTE270 +25 C unless otherwise specified) C Symbol Test Conditions h I ...