SI4435BDY-T1-E3 Siliconix / Vishay, SI4435BDY-T1-E3 Datasheet

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SI4435BDY-T1-E3

Manufacturer Part Number
SI4435BDY-T1-E3
Description
MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.015Ohm; ID -7A; SO-8; PD 1.5W; VGS +/-20V; -55
Manufacturer
Siliconix / Vishay
Datasheet

Specifications of SI4435BDY-T1-E3

Channel Type
P
Current, Drain
–6.9 A
Gate Charge, Total
70 nC
Package Type
SO-8
Polarization
P-Channel
Power Dissipation
1.5 W
Resistance, Drain To Source On
0.035 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
110 ns
Time, Turn-on Delay
10 ns
Transconductance, Forward
24 S
Voltage, Breakdown, Drain To Source
-30 V
Voltage, Drain To Source
–30 V
Voltage, Forward, Diode
-0.8 V
Voltage, Gate To Source
±20 V
Lead Free Status / Rohs Status
RoHS Compliant part

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4435BDY-T1-E3
Manufacturer:
EXAR
Quantity:
12 000
Part Number:
SI4435BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
5 000
Part Number:
SI4435BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI4435BDY-T1-E3
Manufacturer:
VISHAY-Pb
Quantity:
40
Part Number:
SI4435BDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1 ” x 1” FR4 Board.
i
DS
−30
−30
(V)
J
Ordering Information: Si4435BDY-T1
ti
t A bi
0.035 @ V
0.020 @ V
J
J
a
a
G
S
S
S
= 150_C)
= 150_C)
t
a
a
r
Parameter
Parameter
DS(on)
Si4435BDY-T1—E3 (Lead (Pb)-Free)
1
2
3
4
GS
GS
a
a
= −4.5 V
= −10 V
Top View
(W)
P-Channel 30-V (D-S) MOSFET
SO-8
a
8
7
6
5
A
D
D
D
D
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
t v 10 sec
T
T
T
T
I
A
A
A
A
D
−9.1
−6.9
= 25_C
= 70_C
= 25_C
= 70_C
(A)
Symbol
Symbol
T
R
R
R
J
V
V
I
P
P
, T
DM
thJA
thJF
I
I
I
GS
DS
D
D
S
D
D
G
stg
P-Channel MOSFET
FEATURES
D TrenchFETr Power MOSFET
D Advanced High Cell Density Process
D Lead (Pb)-Free Version is RoHS
APPLICATIONS
D Load Switches
D Battery Switch
Compliant
D
S
10 secs
Typical
−9.1
−7.3
−2.1
2.5
1.6
40
70
18
−55 to 150
"20
−30
−50
Steady State
Maximum
Vishay Siliconix
−1.25
−5.6
1.5
0.9
−7
50
85
22
Si4435BDY
Unit
Unit
_C/W
_C
C/W
W
W
V
V
A
A
Available
1

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SI4435BDY-T1-E3 Summary of contents

Page 1

... V = − −30 −30 0.035 @ V = −4 SO Top View Ordering Information: Si4435BDY-T1 Si4435BDY-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current continuous Source Current (Diode Conduction Maximum Power Dissipation ...

Page 2

... Si4435BDY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage ...

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