SUP75N03-04-E3 Siliconix / Vishay, SUP75N03-04-E3 Datasheet

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SUP75N03-04-E3

Manufacturer Part Number
SUP75N03-04-E3
Description
MOSFET; TO-220 30V 75A 4MOHM
Manufacturer
Siliconix / Vishay
Datasheet
1.SUP75N03-04-E3.pdf (5 pages)

Specifications of SUP75N03-04-E3

Channel Type
N
Current, Drain
75 A
Fall Time
95 ns
Gate Charge, Total
250 nC
Operating And Storage Temperature
–55 to +175 °C
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
187 W
Resistance, Drain To Source On
0.006 Ohm
Resistance, Thermal, Junction To Case
0.6 °C/W
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
–55 °C
Thermal Resistance, Junction To Ambient
40 °C/W
Time, Rise
40 ns
Time, Turn-off Delay
190 ns
Time, Turn-on Delay
40 ns
Transconductance, Forward
30 S
Voltage, Breakdown, Drain To Source
30 V
Voltage, Diode Forward
1.3 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve for voltage derating.
d. When Mounted on 1" square PCB (FR-4 material).
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 70745
S-62484-Rev. F, 04-Dec-06
SUP75N03-04
Lead Temperature (
Ordering Information: SUP75N03-04
PRODUCT SUMMARY
TO-220AB
ABSOLUTE MAXIMUM RATINGS T
Parameter
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Pulse Diode Forward Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
Top View
G D S
V
(BR)DSS
30
DRAIN connected to TAB
(V)
1
/
SUP75N03-04-E3 (Lead (Pb)-free)
SUB75N03-04
SUB75N03-04-E3 (Lead (Pb)-free)
16
" from case for 10 sec.)
r
DS(on)
N-Channel 30-V (D-S), 175 °C MOSFET
J
0.004
b
= 175 °C)
(Ω)
SUB75N03-04
TO-263
Top View
G
D
S
DRAIN connected to TAB
T
C
I
D
= 25 °C (TO-220AB and TO-263)
75
C
(A)
a
= 25 °C, unless otherwise noted
PCB Mount (TO-263)
T
Free Air (TO-220AB)
A
= 25 °C (TO-263)
T
L = 0.05 mH
L = 0.1 mH
T
TO-220AB
C
C
= 125 °C
= 25 °C
FEATURES
• TrenchFET
• 175 °C Rated Maximum Junction
d
d
Temperature
Symbol
Symbol
T
®
R
R
J
V
E
E
I
I
I
P
, T
thJA
thJC
DM
T
I
SM
I
AR
Power MOSFETs
GS
AS
AR
D
S
D
L
stg
G
N-Channel MOSFET
SUP/SUB75N03-04
- 55 to 175
D
S
Limit
Limit
62.5
± 20
187
250
250
280
140
300
75
75
0.6
3.7
40
75
75
Vishay Siliconix
a
a
c
www.vishay.com
RoHS*
COMPLIANT
°C/W
Unit
Unit
mJ
°C
W
V
A
Available
1

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SUP75N03-04-E3 Summary of contents

Page 1

... TO-220AB TO-263 DRAIN connected to TAB G Top View SUB75N03- Top View SUP75N03-04 Ordering Information: SUP75N03-04 SUP75N03-04-E3 (Lead (Pb)-free) SUB75N03-04 SUB75N03-04-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Pulse Diode Forward Current Continuous Source Current (Diode Conduction) ...

Page 2

SUP/SUB75N03-04 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance Dynamic Input ...

Page 3

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 250 200 150 100 Drain-to-Source Voltage (V) DS Output Characteristics 175 150 ...

Page 4

SUP/SUB75N03-04 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 2.0 1.5 1.0 0.5 0 Junction Temperature (°C) J On-Resistance ...

Page 5

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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