80RIA80PBF Vishay PCS, 80RIA80PBF Datasheet - Page 2

• Manufacturer Part Number: 80RIA80PBF
• Description: THYRISTOR; PHASE CONTROL; 800 V; 1600 A @ 10 MS (100% VRRM REAPPLIED); 1.6 V
• Manufacturer: Vishay PCS
• Type: Phase Controlr

Specifications of 80RIA80PBF

• Lead Free Status / Rohs Status: RoHS Compliant part

80RIA...PbF/81RIA...PbF Series
Vishay High Power Products
www.vishay.com
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
Maximum I
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Typical latching current
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned-on current
Typical delay time
Typical turn-off time
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
2
2
t for fusing
√t for fusing
For technical questions, contact: [e-mail]
SYMBOL
SYMBOL
SYMBOL
V
V
I
T(RMS)
dV/dt
I
I
dI/dt
I
I
T(TO)1
T(TO)2
V
RRM
T(AV)
DRM
TSM
Phase Control Thyristors
I
I
r
r
t
t
I
I
2
2
TM
t1
t2
H
d
q
L
t
√t
,
(Stud Version), 80 A
T
0.2 µF, 15 Ω, gate pulse: 20 V, 65 Ω, t
Per JEDEC standard RS-397, 5.2.2.6.
Gate pulse: 10 V, 15 Ω source, t
V
I
V, dV/dt = 20 V/µs, gate bias: 0 V 25 Ω, t
T
T
180° conduction, half sine wave
DC at 75 °C case temperature
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
I
T
TM
pk
J
J
d
J
J
= 125 °C, V
= 125 °C exponential to 67 % rated V
= 125 °C rated V
= 25 °C, anode supply 12 V resistive load
= Rated V
= 250 A, T
= 50 A, T
T(AV)
T(AV)
), T
), T
J
DRM
J
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
d
= T
T(AV)
T(AV)
= 25 °C, t
= Rated V
J
J
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
, I
= T
= T
J
TM
maximum, dI/dt = - 5 A/µs, V
< I < π x I
< I < π x I
DRM
J
J
= 50 Adc, T
maximum
maximum
RRM
RRM
/V
p
RRM
DRM
= 10 ms sine pulse
T(AV)
T(AV)
, I
Sinusoidal half wave,
initial T
applied
TM
p
), T
), T
J
= 6 µs, t
= 2 x dI/dt snubber
= 25 °C
J
J
J
p
= T
= T
= T
= 6 µs, t
DRM
p
J
J
J
r
= 500 µs
= 0.1 µs,
maximum
maximum
maximum
r
= 0.5 µs
R
= 50
Document Number: 94392
VALUES
VALUES
VALUES
Revision: 11-Aug-08
180.5
1900
1990
1600
1675
12.7
11.7
0.99
1.13
2.29
1.84
1.60
125
200
400
300
110
500
80
85
18
16
15
1
UNITS
UNITS
UNITS
kA
kA
A/µs
V/µs
mΩ
mA
°C
mA
µs
A
A
V
V
2
2
s
√s