PIC16F887-I/PT Microchip Technology Inc., PIC16F887-I/PT Datasheet - Page 117

no-image

PIC16F887-I/PT

Manufacturer Part Number
PIC16F887-I/PT
Description
MCU, 8-Bit, 8KW Flash, 368 RAM, 36 I/O, TQFP-44
Manufacturer
Microchip Technology Inc.
Datasheet

Specifications of PIC16F887-I/PT

A/d Inputs
14-Channel, 10-Bit
Comparators
2
Cpu Speed
5 MIPS
Eeprom Memory
256 Bytes
Frequency
20 MHz
Input Output
35
Interface
I2C/SPI/USART
Memory Type
Flash
Number Of Bits
8
Package Type
44-pin TFQP
Programmable Memory
14K Bytes
Ram Size
368 Bytes
Resistance, Drain To Source On
Bytes
Serial Interface
MSSP or EUSART
Speed
20 MHz
Timers
2-8-bit, 1-16-bit
Voltage, Range
2-5.5 V
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PIC16F887-I/PT
Manufacturer:
Microchip Technology
Quantity:
10 000
Part Number:
PIC16F887-I/PT
Manufacturer:
Microchip
Quantity:
600
Part Number:
PIC16F887-I/PT
0
Company:
Part Number:
PIC16F887-I/PT
Quantity:
1 600
Company:
Part Number:
PIC16F887-I/PT
Quantity:
6 400
Company:
Part Number:
PIC16F887-I/PT
Quantity:
3 200
10.1.4
To read a program memory location, the user must
write the Least and Most Significant address bits to the
EEADR and EEADRH registers, set the EEPGD con-
trol bit of the EECON1 register, and then set control bit
RD. Once the read control bit is set, the program mem-
ory Flash controller will use the second instruction
cycle to read the data. This causes the second instruc-
tion immediately following the “BSF
instruction to be ignored. The data is available in the
very next cycle, in the EEDAT and EEDATH registers;
therefore, it can be read as two bytes in the following
instructions.
EXAMPLE 10-3:
© 2007 Microchip Technology Inc.
;
;
BANKSEL EEADR
MOVLW
MOVWF
MOVLW
MOVWF
BANKSEL EECON1
BSF
BSF
NOP
NOP
BANKSEL EEDAT
MOVF
MOVWF
MOVF
MOVWF
BCF
READING THE FLASH PROGRAM
MEMORY
MS_PROG_EE_ADDR
EEADRH
LS_PROG_EE_ADDR
EEADR
EECON1, EEPGD
EECON1, RD
EEDAT, W
LOWPMBYTE
EEDATH, W
HIGHPMBYTE
STATUS, RP1
FLASH PROGRAM READ
EECON1,RD”
;
;
;MS Byte of Program Address to read
;
;LS Byte of Program Address to read
;
;Point to PROGRAM memory
;EE Read
;First instruction after BSF EECON1,RD executes normally
;Any instructions here are ignored as program
;memory is read in second cycle after BSF EECON1,RD
;
;W = LS Byte of Program Memory
;
;W = MS Byte of Program EEDAT
;
;Bank 0
PIC16F882/883/884/886/887
Preliminary
EEDAT and EEDATH registers will hold this value until
another read or until it is written to by the user.
Note 1: The two instructions following a program
2: If the WR bit is set when EEPGD = 1, it
memory read are required to be NOPs.
This prevents the user from executing a
two-cycle
instruction after the RD bit is set.
will be immediately reset to ‘0’ and no
operation will take place.
instruction
DS41291D-page 115
on
the
next

Related parts for PIC16F887-I/PT