2SK3557-7-TB-E Sanyo Semiconductor, 2SK3557-7-TB-E Datasheet

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2SK3557-7-TB-E

Manufacturer Part Number
2SK3557-7-TB-E
Description
Amplifier; RF, J-FET, N-ch, 15V, 50mA, 2.9pF, CP
Manufacturer
Sanyo Semiconductor
Datasheet

Specifications of 2SK3557-7-TB-E

Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
Ordering number : ENN7169
Preliminary
Applications
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : IR
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Gate-to-Drain Breakdown Voltage
Gate Cutoff Current
Cutoff Voltage
AM tuner RF amplifier.
Low noise amplifier.
Large yfs .
Small Ciss.
Ultrasmall-sized package permitting 2SK3557-
applied sets to be made smaller and slimer.
Ultralow noise figure.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
V (BR)GDS
V GS (off)
Symbol
Symbol
V GDS
V DSX
I GSS
Tstg
P D
I G
I D
Tj
I G =- -10 A, V DS =0
V GS =--10V, V DS =0
V DS =5V, I D =100 A
Low-Noise HF Amplifier Applications
2SK3557
Conditions
Package Dimensions
unit : mm
2050A
Conditions
1
0.4
0.95 0.95
2.9
1.9
3
N-Channel Junction Silicon FET
[2SK3557]
min
2
--0.3
--15
60502 TS IM TA-3622
Ratings
1 : Source
2 : Drain
3 : Gate
SANYO : CP
0.16
typ
Ratings
--0.7
2SK3557
--55 to +150
Continued on next page.
0 to 0.1
max
200
150
- -15
--1.0
--1.5
15
10
50
No.7169-1/4
Unit
mW
Unit
mA
mA
nA
V
V
C
C
V
V

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2SK3557-7-TB-E Summary of contents

Page 1

... Applications AM tuner RF amplifier. • Low noise amplifier. • Features Large yfs . • Small Ciss. • Ultrasmall-sized package permitting 2SK3557- • applied sets to be made smaller and slimer. Ultralow noise figure. • Specifications Absolute Maximum Ratings at Ta=25 C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage ...

Page 2

... Continued from preceding page. Parameter Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Noise Figure *The 2SK3557 is classified by I DSS as follows : (unit : mA) Rank DSS 10.0 to 20.0 16 0.4 0.8 1.2 Drain-to-Source Voltage = --1.4 --1.2 --1.0 --0.8 --0.6 Gate-to-Source Voltage ...

Page 3

... V GS (off DSS Drain Current, I DSS -- mA Crss -- 1 1.0 10 Drain-to-Source Voltage 0.1 1.0 10 Signal Source Resistance 2SK3557 = =100 1.0 IT04227 f=1MHz 0.01 IT04229 240 =1mA f=1kHz 200 160 120 100 1000 ITR02759 Ciss -- f=1MHz Drain-to-Source Voltage = =1mA Rg= 0.1 1.0 10 Frequency kHz ...

Page 4

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2002. Specifications and information herein are subject to change without notice. 2SK3557 PS No.7169-4/4 ...

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