2SK3875-01 Fuji Semiconductor, 2SK3875-01 Datasheet
2SK3875-01
Manufacturer Part Number
2SK3875-01
Description
MOSFET, Power; N-Ch; VDSS 900V; RDS(ON) 0.79Ohm; ID 13A; TO-247; PD 355W; VGS +/-30V
Manufacturer
Fuji Semiconductor
Datasheet
1.2SK3875-01.pdf
(1 pages)
Specifications of 2SK3875-01
Channel Type
N-Channel
Current, Drain
13 A
Gate Charge, Total
46 nC
Package Type
TO-247
Polarization
N-Channel
Power Dissipation
355 W
Resistance, Drain To Source On
0.79 Ohm
Temperature, Operating, Maximum
+150 °C
Time, Turn-off Delay
60 ns
Time, Turn-on Delay
20 ns
Transconductance, Forward
12 S
Voltage, Breakdown, Drain To Source
900 V
Voltage, Forward, Diode
1.1 V
Voltage, Gate To Source
±30 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK3875-01
Manufacturer:
FUJI
Quantity:
5 510
Company:
Part Number:
2SK3875-01
Manufacturer:
HONEYWELL
Quantity:
5 510
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