IDT82V1054APF IDT, Integrated Device Technology Inc, IDT82V1054APF Datasheet - Page 17

• Manufacturer Part Number: IDT82V1054APF
• Description: IC PCM CODEC 4CH MPI 3.3V 64TQFP
• Manufacturer: IDT, Integrated Device Technology Inc
• Type: Line Interface Units (LIUs)r

Specifications of IDT82V1054APF

• Voltage - Supply: 3.135 V ~ 3.465 V
• Mounting Type: Surface Mount
• Package / Case: 64-TQFP, 64-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Number Of Drivers/receivers: -
• Protocol: -
• Other names: 82V1054APF

IDT82V1054A QUAD PROGRAMMABLE PCM CODEC WITH MPI INTERFACE
Note 1: In block 3 of the Coe-RAM, word 5 to word 8 are used for tone coefficients while word 1 to word 4 are used for GIS coefficients. If users do not want to change the GIS coefficient
while writing tone coefficients to the Coe-RAM, they can stop the procedure of consecutive adjacent addressing (after writing data to word 5) by pulling the CS signal to high, or they can
rewrite word 1 to word 4 with the original GIS coefficients.
data byte 14
data byte 15
data byte 16
− Examples for the Coe-RAM used for tone coefficients:
1010,0101
0001,0010
1110,0010
data byte 1
data byte 2
data byte 3
data byte 4
data byte 5
data byte 6
data byte 7
data byte 8
data byte 9
data byte 10
data byte 11
data byte 12
data byte 13
data byte 14
data byte 15
data byte 16
• Reading from the Coe-RAM
− Examples for Coe-RAM blocks shared by all four channels:
0110,0000
After the preceding command is executed, data will be sent out as follows:
1000,0001
data byte 1
data byte 2
data byte 3
data byte 4
data byte 5
data byte 6
data byte 7
data byte 8
data byte 9
data byte 10
data byte 11
data byte 12
data byte 13
data byte 14
data byte 15
data byte 16
− Examples for the Coe-RAM used for tone coefficients:
1010,0011
0001,0010
0110,0010
After the preceding commands are executed, data will be sent out as follows:
1000,0001
data byte 1
data byte 2
data byte 3
low byte of word 2 of block 1
high byte of word 1 of block 1
low byte of word 1 of block 1
Channel Enable command
Data for GREG6 (Channel 1 is enabled for programming)
Coe-RAM write command (The address of '00010' is located in block 3, which means that data will be written to block 3.)
high byte of word 8 of block 3
low byte of word 8 of block 3
high byte of word 7 of block 3
low byte of word 7 of block 3
high byte of word 6 of block 3
low byte of word 6 of block 3
high byte of word 5 of block 3
low byte of word 5 of block 3
high byte of word 4 of block 3 (see Note 1)
low byte of word 4 of block 3
high byte of word 3 of block 3
low byte of word 3 of block 3
high byte of word 2 of block 3
low byte of word 2 of block 3
high byte of word 1 of block 3
low byte of word 1 of block 3
Coe-RAM read command (The address of '00000' is located in block 1, which means that block 1 will be read.)
Identification code
data read out from high byte of word 8 of block 1
data read out from low byte of word 8 of block 1
data read out from high byte of word 7 of block 1
data read out from low byte of word 7 of block 1
data read out from high byte of word 6 of block 1
data read out from low byte of word 6 of block 1
data read out from high byte of word 5 of block 1
data read out from low byte of word 5 of block 1
data read out from high byte of word 4 of block 1
data read out from low byte of word 4 of block 1
data read out from high byte of word 3 of block 1
data read out from low byte of word 3 of block 1
data read out from high byte of word 2 of block 1
data read out from low byte of word 2 of block 1
data read out from high byte of word 1 of block 1
data read out from low byte of word 1 of block 1
Channel Enable command
Data for GREG6 (Channel 1 is enabled for programming)
Coe-RAM read command (The address of '00010' is located in block 3, which means that block 3 will be read.)
Identification code
data read out from high byte of word 8 of block 3
data read out from low byte of word 8 of block 3
data read out from high byte of word 7 of block 3
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INDUSTRIAL TEMPERATURE