IDC08S60CE Infineon Technologies, IDC08S60CE Datasheet - Page 2

• Manufacturer Part Number: IDC08S60CE
• Description: Schottky (Diodes & Rectifiers) SiC Schottky Diode 600V 8A
• Manufacturer: Infineon Technologies

Specifications of IDC08S60CE

• Packages: S--0
• Technology: thinQ!™ SiC diode chips
• Vds (max): 600.0 V
• If (max): 8.0 A
• If,sm (max): 59.0 A
• Vf (typ): 1.5 V
• Other names: IDC08S60CEZJ

Maximum Ratings
Parameter
Repetitive peak reverse voltage
DC blocking voltage
Continuous forward current limited by
T
Surge non repetitive forward current
sine halfwave
Repetitive peak forward current
limited by T
Non-repetitive peak forward current
Operating junction and storage
temperature
Static Characteristics (tested on wafer)
Parameter
Reverse current
Diode forward voltage
Dynamic Characteristics, at T
Parameter
Total capacitive charge
Switching time
Total capacitance
1)
di/dt), different from t
to absence of minority carrier injection
Edited by INFINEON Technologies, AIM IMM, Edition 1.1, 27.01.2009
vjmax
t
c
is the time constant for the capacitive displacement current waveform (independent from T
vjmax
1)
rr
which is dependent on T
I
V
Q
t
C
Symbol
Symbol
R
c
F
C
v j
= 25 C, unless otherwise specified, tested at component
Symbol
V
V
I
I
I
I
T
T
F
F , S M
F , R M
F , m a x
d i / d t = 2 0 0 A / s
v j
s t g
R R M
D C
V
I
V
,
F
f = 1 M H z
R
I
R
< = I
F
=60 0 V
= 4 0 0 V
=8 A
v j
F , m a x
, I
Conditions
Conditions
LOAD
T
C
and di/dt. No reverse recovery time constant t
T
T
= 100 C , T
T
T
C
C
T
T
v j
v j
V
V
=25 C , t
=25 C , t
v j
v j
V
= 1 50 °C
= 1 50 °C
R
R
T
T
Condition
=30 0 V
=60 0 V
R
=2 5 C
=2 5 C
vj
vj
D=0 . 1
=1 V
< 150°C
= 25 °C
vj
P
p
=10 ms
=1 0µs
= 1 50 C ,
min.
min.
IDC08S60CE
Value
Value
Typ.
Typ.
310
1.5
19
50
50
1
-55...+175
Value
600
600
264
59
35
8
max.
max.
100
<10
v j
1.7
, I
LOAD
rr
Unit
Unit
Unit
and
due
p F
µA
nC
ns
V
V
A
C