2SD1047 STMicroelectronics, 2SD1047 Datasheet - Page 3

• Manufacturer Part Number: 2SD1047
• Description: IGBT & Power Bipolar
• Manufacturer: STMicroelectronics
• Series: -r

Specifications of 2SD1047

• Transistor Type: NPN
• Current - Collector (ic) (max): 12A
• Voltage - Collector Emitter Breakdown (max): 140V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 700mA, 7A
• Current - Collector Cutoff (max): -
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 1A, 5V
• Power - Max: 100W
• Frequency - Transition: 20MHz
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

2SD1047
2
Electrical characteristics
(T
Table 4.
1. Pulse duration = 300 µs, duty cycle ≤ 1.5 %
V
V
V
case
V
(BR)CEO
Symbol
(BR)EBO
CE(sat)
(BR)CBO
C
I
I
V
h
CBO
EBO
t
t
CBO
f
stg
on
FE
t
BE
T
f
= 25 °C; unless otherwise specified)
(1)
(1)
(1)
Electrical characteristics
Collector cut-off current
(I
Emitter cut-off current
(I
Collector-emitter
breakdown voltage (I
Collector-base breakdown
voltage (I
Emitter-base breakdown
voltage (I
Collector-emitter
saturation voltage
Base-emitter voltage
DC current gain
Transition frequency
Collector-base
capacitance (I
Resistive Load
Turn-on time
Storage time
Fall time
E
C
= 0)
= 0)
Parameter
E
C
= 0)
= 0)
E
= 0)
Doc ID 018729 Rev 1
B
= 0)
V
V
I
I
I
I
I
V
I
I
I
V
V
I
C
C
E
C
C
C
C
C
B1
CB
EB
CE
CB
CC
= 1 mA
= 50 mA
= 100 µA
= 5 A
= 7 A
= 1 A
= 5 A
= 0.5 A
= -I
= 6 V
= 200 V
= 5 V
= 10 V
Test conditions
= 60 V
B2
= 0.5 A
I
I
I
B
B
V
V
V
C
f = 1 MHz
I
CE
CE
CE
C
= 500 mA
= 700 mA
= 5 A
= 5 A
= 5 V
= 4 V
= 12 V
Min.
Electrical characteristics
140
200
60
50
6
Typ.
0.22
150
4.3
0.5
20
Max.
200
0.1
0.1
0.5
0.7
1.3
MHz
Unit
µA
µA
pF
µs
µs
µs
V
V
V
V
V
V
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