FDMC8200S Fairchild Semiconductor, FDMC8200S Datasheet - Page 4

• Manufacturer Part Number: FDMC8200S
• Description: MOSFET Power 30V Dual N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMC8200S

• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 20 mOhms
• Forward Transconductance Gfs (max / Min): 43 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 18 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 33
• Module Configuration: Dual
• Continuous Drain Current Id: 18A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.02ohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / Rohs Status: Details

FDMC8200S Rev.C4
©2011 Fairchild Semiconductor Corporation
Typical Characteristics (Q1 N-Channel)
40
30
20
10
40
30
20
10
1.6
1.4
1.2
1.0
0.8
0
Figure 3. Normalized On Resistance
2.0
0
Figure 1.
0.0
-75
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
I
V
D
GS
V
= 6 A
-50
vs Junction Temperature
DS
= 10 V
0.5
2.5
= 5 V
V
V
V
GS
GS
T
DS
-25
J
On Region Characteristics
, GATE TO SOURCE VOLTAGE (V)
,
V
= 3.5 V
,
JUNCTION TEMPERATURE (
GS
DRAIN TO SOURCE VOLTAGE (V)
T
1.0
J
= 4 V
V
0
= 150
GS
3.0
= 4.5 V
μ
25
o
s
C
1.5
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
T
V
V
50
J
3.5
GS
GS
= -55
= 10 V
= 6 V
T
2.0
J
75
= 25
o
C
o
o
4.0
100 125 150
C
C )
2.5
μ
s
4.5
3.0
T
J
4
= 25°C unless otherwise noted
0.001
0.01
100
0.1
80
60
40
20
Figure 2.
Figure 4.
40
10
0
Forward Voltage vs Source Current
4
3
2
1
0
1
vs Drain Current and Gate Voltage
Figure 6.
0.2
2
0
T
V
J
GS
T
= 25
J
= 0 V
= 150
V
SD
Normalized On-Resistance
o
On-Resistance vs Gate to
0.4
V
V
, BODY DIODE FORWARD VOLTAGE (V)
C
GS
Source Voltage
GS
Source to Drain Diode
o
I
4
10
C
D
,
= 3.5 V
,
GATE TO SOURCE VOLTAGE (V)
T
DRAIN CURRENT (A)
J
= 125
0.6
o
C
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
6
20
I
D
V
V
= 6 A
0.8
GS
GS
= 6 V
= 4 V
T
J
T
= -55
J
8
30
= 25
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1.0
V
V
o
C
GS
GS
o
C
= 10 V
= 4.5 V
μ
μ
s
s
10
1.2
40