FDMC8200S Fairchild Semiconductor, FDMC8200S Datasheet - Page 4
![MOSFET Power 30V Dual N-Channel PowerTrench MOSFET](/photos/39/68/396865/largeimagefdm_sml.jpg)
FDMC8200S
Manufacturer Part Number
FDMC8200S
Description
MOSFET Power 30V Dual N-Channel PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDMC8200S.pdf
(12 pages)
Specifications of FDMC8200S
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
20 mOhms
Forward Transconductance Gfs (max / Min)
43 S
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
18 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
Power 33
Module Configuration
Dual
Continuous Drain Current Id
18A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.02ohm
Rds(on) Test Voltage Vgs
10V
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMC8200S
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDMC8200S Rev.C4
©2011 Fairchild Semiconductor Corporation
Typical Characteristics (Q1 N-Channel)
40
30
20
10
40
30
20
10
1.6
1.4
1.2
1.0
0.8
0
Figure 3. Normalized On Resistance
2.0
0
Figure 1.
0.0
-75
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
I
V
D
GS
V
= 6 A
-50
vs Junction Temperature
DS
= 10 V
0.5
2.5
= 5 V
V
V
V
GS
GS
T
DS
-25
J
On Region Characteristics
, GATE TO SOURCE VOLTAGE (V)
,
V
= 3.5 V
,
JUNCTION TEMPERATURE (
GS
DRAIN TO SOURCE VOLTAGE (V)
T
1.0
J
= 4 V
V
0
= 150
GS
3.0
= 4.5 V
μ
25
o
s
C
1.5
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
T
V
V
50
J
3.5
GS
GS
= -55
= 10 V
= 6 V
T
2.0
J
75
= 25
o
C
o
o
4.0
100 125 150
C
C )
2.5
μ
s
4.5
3.0
T
J
4
= 25°C unless otherwise noted
0.001
0.01
100
0.1
80
60
40
20
Figure 2.
Figure 4.
40
10
0
Forward Voltage vs Source Current
4
3
2
1
0
1
vs Drain Current and Gate Voltage
Figure 6.
0.2
2
0
T
V
J
GS
T
= 25
J
= 0 V
= 150
V
SD
Normalized On-Resistance
o
On-Resistance vs Gate to
0.4
V
V
, BODY DIODE FORWARD VOLTAGE (V)
C
GS
Source Voltage
GS
Source to Drain Diode
o
I
4
10
C
D
,
= 3.5 V
,
GATE TO SOURCE VOLTAGE (V)
T
DRAIN CURRENT (A)
J
= 125
0.6
o
C
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
6
20
I
D
V
V
= 6 A
0.8
GS
GS
= 6 V
= 4 V
T
J
T
= -55
J
8
30
= 25
www.fairchildsemi.com
1.0
V
V
o
C
GS
GS
o
C
= 10 V
= 4.5 V
μ
μ
s
s
10
1.2
40