IRFPS40N60K Vishay, IRFPS40N60K Datasheet - Page 2

• Manufacturer Part Number: IRFPS40N60K
• Description: MOSFET Power N-Chan 600V 40 Amp
• Manufacturer: Vishay

Specifications of IRFPS40N60K

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.13 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 40 A
• Power Dissipation: 570 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Super-247
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No RoHS Version Available

IRFPS40N60K, SiHFPS40N60K
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. C
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Body Diode Recovery Current
Forward Turn-On Time
DS
oss
Temperature Coefficient
eff. is a fixed capacitance that gives the same charging time as C
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
C
R
V
oss
t
t
I
R
I
I
C
C
R
V
C
V
R
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
I
RRM
GSS
DSS
Q
g
Q
t
DS
SM
I
t
t
on
thCS
DS
oss
oss
t
SD
thJA
thJC
iss
rss
S
rr
gd
fs
gs
r
f
g
rr
eff.
/T
J
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
T
T
T
V
V
V
J
J
J
J
V
GS
GS
GS
= 125 °C
= 125 °C
= 25 °C
= 25 °C
Intrinsic turn-on time is negligible (turn-on is dominated by L
DS
T
Reference to 25 °C, I
= 10 V
= 0 V
= 10 V
J
= 480 V, V
= 25 °C, I
V
V
V
TYP.
V
TEST CONDITIONS
f = 1.0 MHz, see fig. 5
oss
0.24
DS
DS
GS
DS
-
-
while V
= 600 V, V
= V
= 0 V, I
V
= 50 V, I
V
T
V
GS
V
V
I
J
DS
S
GS
GS
F
V
R
I
GS
DS
DS
D
= 25 °C
V
= 38 A, V
= 38 A, dI/dt = 100 A/µs
DD
G
= ± 30 V
= 25 V,
, I
= 38 A, V
= 0 V,
DS
see fig. 6 and 13
DS
= 0 V, T
= 480 V , f = 1.0 MHz
= 4.3 Ω, see fig. 10
= 1.0 V , f = 1.0 MHz
D
D
= 300 V, I
D
= 250 µA
= 0 V to 480 V
= 250 µA
is rising from 0 % to 80 % V
I
GS
= 24 A
D
= 24 A
D
= 0 V
GS
= 1 mA
J
DS
G
= 125 °C
= 0 V
b
D
= 480 V,
b
= 38 A,
MAX.
b
0.22
b
D
S
c
40
-
b
MIN.
600
3.0
21
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S09-0059-Rev. A, 02-Feb-09
DS
Document Number: 91261
.
0.110
TYP.
7970
9440
0.63
750
200
260
110
630
730
75
47
97
60
14
17
39
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
± 100
MAX.
0.130
1090
S
250
330
150
160
950
5.0
1.5
50
84
40
20
25
58
-
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
)
V/°C
nA
µA
nC
µC
pF
ns
ns
V
V
Ω
S
A
V
A