IRFPS40N60K Vishay, IRFPS40N60K Datasheet - Page 3

• Manufacturer Part Number: IRFPS40N60K
• Description: MOSFET Power N-Chan 600V 40 Amp
• Manufacturer: Vishay

Specifications of IRFPS40N60K

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.13 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 40 A
• Power Dissipation: 570 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Super-247
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No RoHS Version Available

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91261
S09-0059-Rev. A, 02-Feb-09
0.001
1000
0.01
100
100
0.1
0.1
10
10
1
1
0.1
0.1
TOP
BOTTOM 4.5V
TOP
BOTTOM 4.5V
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
VGS
VGS
15V
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
1
1
20μs PULSE WIDTH
Tj = 25°C
20μs PULSE WIDTH
Tj = 150°C
4.5V
4.5V
10
10
100
100
IRFPS40N60K, SiHFPS40N60K
1000
0.01
100
0.1
Fig. 4 - Normalized On-Resistance vs. Temperature
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
1
-60
4
I
D
T = 150
Fig. 3 - Typical Transfer Characteristics
J
=
-40
38A
V
6
-20
T , Junction Temperature
T = 25 C
GS
J
J
°
, Gate-to-Source Voltage (V)
C
0
°
8
20
40
10
60
Vishay Siliconix
V
20μs PULSE WIDTH
DS
80
= 50V
11
100
( C)
V
°
120
www.vishay.com
GS
13
=
140
10V
160
15
3