IRFPS40N60K Vishay, IRFPS40N60K Datasheet - Page 5

• Manufacturer Part Number: IRFPS40N60K
• Description: MOSFET Power N-Chan 600V 40 Amp
• Manufacturer: Vishay

Specifications of IRFPS40N60K

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.13 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 40 A
• Power Dissipation: 570 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Super-247
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No RoHS Version Available

Document Number: 91261
S09-0059-Rev. A, 02-Feb-09
Fig. 9 - Maximum Drain Current vs. Case Temperature
40
30
20
10
Fig. 12a - Unclamped Inductive Test Circuit
0
25
0.001
0.01
0.1
0.00001
R
1
20 V
G
V
D = 0.50
DS
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature
t
p
C
I
AS
D.U.T.
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.01 Ω
L
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
15 V
( C)
Driver
°
125
+
- V
t , Rectangular Pulse Duration (sec)
1
A
DD
150
0.001
IRFPS40N60K, SiHFPS40N60K
0.01
Fig. 12b - Unclamped Inductive Waveforms
I
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
AS
V
V
DS
GS
1. Duty factor D =
2. Peak T
R
Notes:
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
d(on)
J
= P
V
DS
t
DM
r
x Z
t
t / t
p
1
0.1
thJC
P
2
D.U.T.
DM
R
+ T
Vishay Siliconix
D
C
t
t
1
d(off)
V
DS
t
2
t
f
+
-
www.vishay.com
V
DD
1
5