IRFPS40N60K Vishay, IRFPS40N60K Datasheet - Page 6

• Manufacturer Part Number: IRFPS40N60K
• Description: MOSFET Power N-Chan 600V 40 Amp
• Manufacturer: Vishay

Specifications of IRFPS40N60K

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.13 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 40 A
• Power Dissipation: 570 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Super-247
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No RoHS Version Available

IRFPS40N60K, SiHFPS40N60K
Vishay Siliconix
www.vishay.com
6
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
1200
960
720
480
240
0
25
Fig. 13a - Basic Gate Charge Waveform
V
GS
V
Starting Tj, Junction Temperature
V
G
Q
50
GS
Charge
75
Q
Q
GD
G
100
TOP
BOTTOM
( C)
°
125
17A
24A
38A
I D
150
5.0
4.5
4.0
3.5
3.0
2.5
2.0
-75
Fig. 12d - Threshold Voltage vs. Temperature
12 V
V
Fig. 13b - Gate Charge Test Circuit
GS
Same type as D.U.T.
-50
Current regulator
0.2 µF
-25
T J , Temperature ( °C )
Current sampling resistors
3 mA
50 kΩ
0
0.3 µF
25
I
G
S09-0059-Rev. A, 02-Feb-09
50
I D = 250μA
Document Number: 91261
D.U.T.
I
D
75
100 125 150
+
-
V
DS