BLA0912-250 NXP Semiconductors, BLA0912-250 Datasheet - Page 8
![MOSFET Power LDMOS TNS](/photos/41/53/415337/sot502a_3d_sml.gif)
BLA0912-250
Manufacturer Part Number
BLA0912-250
Description
MOSFET Power LDMOS TNS
Manufacturer
NXP Semiconductors
Datasheet
1.BLA0912-250.pdf
(13 pages)
Specifications of BLA0912-250
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.06 Ohms
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 22 V
Power Dissipation
700 W
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Package / Case
SOT-502
Minimum Operating Temperature
- 65 C
Lead Free Status / Rohs Status
Details
Other names
BLA0912-250,112
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BLA0912-250
Manufacturer:
ST
Quantity:
12 400
Company:
Part Number:
BLA0912-250
Manufacturer:
NXP
Quantity:
1 000
Part Number:
BLA0912-250
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
BLA0912-250R
Manufacturer:
NXP
Quantity:
1 000
Company:
Part Number:
BLA0912-250R
Manufacturer:
NXP
Quantity:
5 000
Company:
Part Number:
BLA0912-250R,112
Manufacturer:
NXP
Quantity:
1 400
NXP Semiconductors
BLA0912-250
Product data sheet
Fig 6.
(W)
P
L
(1) f = 960 MHz
(2) f = 1030 MHz
(3) f = 1090 MHz
(4) f = 1140 MHz
(5) f = 1215 MHz
300
250
200
150
100
50
0
0
T
t
Load power as a function of input power;
typical values
p
h
= 100 μs; δ = 10 %.
= 25 °C; V
2
(5)
4
DS
= 36 V; I
6
8
(3)
Dq
(2)
10
= 150 mA; class-AB;
(4)
12
All information provided in this document is subject to legal disclaimers.
001aab080
P
i
14
(W)
(1)
Rev. 3 — 26 November 2010
16
Fig 7.
(%)
η
D
(1) f = 960 MHz
(2) f = 1030 MHz
(3) f = 1090 MHz
(4) f = 1140 MHz
(5) f = 1215 MHz
60
50
40
30
20
10
0
0
T
t
Efficiency as a function of load power;
typical values
p
h
= 100 μs; δ = 10 %.
= 25 °C; V
50
DS
100
= 36 V; I
(1)
150
Avionics LDMOS transistor
BLA0912-250
(3)
Dq
= 150 mA; class-AB;
(5)
(2)
200
(4)
© NXP B.V. 2010. All rights reserved.
P
250
L
001aab081
(W)
300
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