STD4N25-1 STMicroelectronics
STD4N25-1
Manufacturer Part Number
STD4N25-1
Description
MOSFET Power DISC BY STM 4/01 TO-251 N-CH 250V 4A
Manufacturer
STMicroelectronics
Specifications of STD4N25-1
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.1 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
IPAK
Minimum Operating Temperature
- 65 C
Lead Free Status / Rohs Status
No