IS43DR16320B-25DBL ISSI, Integrated Silicon Solution Inc, IS43DR16320B-25DBL Datasheet - Page 19

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IS43DR16320B-25DBL

Manufacturer Part Number
IS43DR16320B-25DBL
Description
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS43DR16320B-25DBL

Lead Free Status / Rohs Status
Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IS43DR16320B-25DBLI
Manufacturer:
XILINX
Quantity:
2
Price:
IS43/46DR86400B, IS43/46DR16320B
ODT DC Electrical Characteristics
Note:
1.
2.
ODT AC Electrical Characteristics and Operating Conditions
Notes:
1.
2.
3.
4.
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. E, 01/17/2011
tAONPD
tAOFPD
Symbol
tAOND
tAOFD
tANPD
tAXPD
tAON
tAOF
Measurement Definition for Rtt(eff):
Apply VIH(AC) and VIL(AC) to test pin seperately, then measure current I(VIH(AC)) and I(VIL(AC)) respectively
Measurement Defintion for VM:
Measure voltage (VM) at test pin (midpoint) with no load:
ODT turn on time min is when the de vice leaves high impedance and ODT resistance begins to turn on. ODT turn on time max is when the ODT resistance is fully
on. Both are measured from t AOND.
ODT turn off time min is when the device starts to turn-off ODT resistance. ODT turn off time max is when the bus is in high impedance. Both are measured from
tAOFD.
For Standard Active Power-Down (with MR S A12 = “0”), the non power -down timings (tAOND, tAON, tAOFD and tAOF) apply.
tANPD an d tAXPD define the timing limit when either Power Down Mode Timings (tAONPD, tAOFPD) or Non-Power Down Mode timings ( tAOND, tAOFD) have
to be applied
Rtt effective impedance value for EMRS(A6=1, A2=0); 150 ohm
Rtt effective impedance value for EMRS(A6=0, A2=1); 75 ohm
Rtt effective impedance value for EMRS(A6=A2=1); 50 ohm
Parameter/Condition
ODT turn-on delay
ODT turn-on
ODT turn-on (Power-Down Mode)
ODT turn-off delay
ODT turn-off
ODT turn-off (Power-Down Mode)
ODT to Power-Down Mode Entry L:atency
ODT Power Down Exit Latency
Deviation of VM with respect to VDDQ/2
Parameter/Condition
Rtt
(
eff
VM
)
=
=
( I
VIH
2
VDDQ
VIH
tAC(Min)+2 ns
x
tAC(Min)+2ns
VM
(
AC
(
tAC(Min)
tAC(Min)
AC
))
Min.
)
2.5
1
2
3
8
( I
VIL
x
VIL
100
(
AC
(
AC
%
deltaVM
Rtt1(eff)
Rtt2(eff)
Rtt3(eff)
)
Symbol
))
2tCK+tAC(Max)+1ns
Min.
120
2.5tCK+tAC+1ns
tAC(Max)+0.6ns
60
40
-6
tAC(Max)+1ns
Max.
2.5
2
Nom.
150
75
50
Max.
180
90
60
+6
Units
tCK
tCK
tCK
tCK
ohms
Units
ohms
ohms
ns
ns
ns
ns
%
Notes
Notes
1
1
1
2
1
3
2
3
4
4
19

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